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    03OCT2006 Search Results

    03OCT2006 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    114-18063-122

    Abstract: 114-18063-1 114-18063-12 114-18025 114-18063 mqs pin PA66 - GF 35
    Contextual Info: 4 RELEASED FOR PUBLICATION 20 20 LOC BY - 12.4 P 0.4 LTR DESCRIPTION A3 A4 C C1 C2 DWN APVD RELEASED FOR PRODUCTION -1 ET00-0002-03 03FEB2003 P.Z. R.M. UPDATED GRAPHIC DRAWING (ECR-06-007324) 14DEC2005 P.Z. O.C. 03OCT2006 M.G. R.M. 19DEC2007 D.B. A.G. CHANGED DWG. REVISION ACCORDING TO PART


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    et00-0002-0303feb2003ecr-06-00732414dec2005+1303oct200619dec2007ecr-07-025394ecr-11-001021ecr-13-01431917jan2011114-18063-122114-18063-1114-18063-12114-18025114-18063mqs pinpa66 - gf 35 PDF

    P130NS04ZB

    Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
    Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A


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    stp130ns04zbstb130ns04zb-1stb130ns04zbstw130ns04zb+8o-220/i2/d2pak/to-247o-247p130ns04zbb130ns04zbjesd97stb130ns04zbt4mosfet igss 100uastw13 PDF

    Contextual Info: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection


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    tde1707dft PDF

    AN495

    Abstract: JESD97 TDE1707 TDE1707DFT
    Contextual Info: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection


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    tde1707dftan495jesd97tde1707 PDF

    Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 10KV contact ESD protection Features • Wide operating voltage range: VCC Opr = 1.65V to 4.8V ■ Low power dissipation: ICC = 0.2µA (Max) at TA = 85°C ■ Low "ON" resistance VIN = 0V:


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    stg4259flip-chip11100maiec-61000-4-2+1stg4259bjr PDF

    AN1235

    Abstract: AN1751 EMIF01-SMIC01F2 JESD97
    Contextual Info: EMIF01-SMIC01F2 Single line IPAD , EMI filter including ESD protection Features • High density capacitor ■ 1 line low-pass-filter ■ Lead-free package ■ High efficiency in EMI filtering ■ Very low PCB space consumtion ■ Very thin package: 0.65 mm


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    emif01-smic01f2an1235an1751jesd97 PDF

    digital accelerometer MEMS 150 degc

    Abstract: JESD97 LGA14 LIS302ALB LIS302ALBTR
    Contextual Info: LIS302ALB MEMS motion sensor 3-axis - ±2g analog output "piccolo" accelerometer Features • 3.0V to 3.6V supply voltage ■ ~2mW power consumption ■ ±2g full-scale ■ 3 acceleration channels plus multiplexed analog output ■ Ratiometric output voltage


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    lis302alb10000glga-14digital accelerometer mems 150 degc+3jesd97lga14lis302albtr PDF

    6v inductive proximity sensor circuit diagram

    Contextual Info: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection


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    tde1707dftan4956v inductive proximity sensor circuit diagram PDF

    JESD97

    Abstract: LGA14 LIS302ALB LIS302ALBTR
    Contextual Info: LIS302ALB MEMS motion sensor 3-axis - ±2g analog output "piccolo" accelerometer Features • 3.0V to 3.6V supply voltage ■ ~2mW power consumption ■ ±2g full-scale ■ 3 acceleration channels plus multiplexed analog output ■ Ratiometric output voltage


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    lis302alb10000gjesd97lga14+1lis302albtr PDF

    ESBT

    Abstract: JESD97 STESB01 STESB01DR STESB01STR
    Contextual Info: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


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    stesb01150nsot23-6lesbt+3jesd97stesb01drstesb01str PDF

    ESBT

    Abstract: JESD97 STESB01 STESB01DR STESB01STR
    Contextual Info: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


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    stesb01150nsot23-6lesbt+3jesd97stesb01drstesb01str PDF

    EMIF01-SMIC01F2

    Abstract: STMicroelectronics marking code date AN1235 AN1751 JESD97
    Contextual Info: EMIF01-SMIC01F2 IPAD Single line EMI filter including ESD protection Main application • Single ended microphone in mobile phones and portable devices Description Flip-Chip 8 Bumps The EMIF01-SMIC01F2 is a highly integrated device designed to suppress EMI/RFI noise for


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    emif01-smic01f2stmicroelectronics marking code datean1235an1751+1jesd97 PDF

    Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 10KV contact ESD protection Features • Wide operating voltage range: VCC Opr = 1.65V to 4.8V ■ Low power dissipation: ICC = 0.2µA (Max) at TA = 85°C ■ Low "ON" resistance VIN = 0V:


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    stg4259flip-chip11100maiec-61000-4-2+1iec-61000-4-and PDF

    N951

    Abstract: JESD97 STN951
    Contextual Info: STN951 Low voltage fast-switching PNP power transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package


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    stn951ot-2232002/93/ecn951+1jesd97 PDF

    ST10F275

    Abstract: source code for park and clark transformation park and clark transformation 3 phase to d-q transformation SVPWM svpwm basics svpwm inverter schematic 10 kw schematic induction heating DFOC LTS6-NP
    Contextual Info: AN2388 Application note Sensor field oriented control IFOC of three-phase AC induction motors using ST10F276 Introduction AC Induction motors are the most widely used motors in industrial motion control systems, as well as in home appliances thanks to their reliability, robustness and simplicity of control.


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    an2388st10f276st10f275source code for park and clark transformation+8park and clark transformation3 phase to d-q transformationsvpwmsvpwm basicssvpwm inverter schematic10 kw schematic induction heatingdfoclts6-np PDF

    Contextual Info: EMIF01-SMIC01F2 Single line IPAD , EMI filter including ESD protection Features • High density capacitor ■ 1 line low-pass-filter ■ Lead-free package ■ High efficiency in EMI filtering ■ Very low PCB space consumtion ■ Very thin package: 0.65 mm


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    emif01-smic01f2 PDF

    Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:


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    stg4259flip-chip11 PDF

    JESD97

    Abstract: N951 STN951
    Contextual Info: STN951 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package 4 1 Applications 2 3


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    stn951ot-223jesd97n951 PDF

    15KV

    Abstract: A115-A C101 IEC-61000-4-2 JESD22 JESD97 STG4259 STG4259BJR
    Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:


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    stg4259flip-chip11iec-61000-4-215kv+5a115-ac101jesd22jesd97stg4259bjr PDF

    Contextual Info: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis


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    stesb01150nsot23-6l PDF

    STMicroelectronics DIODE marking code

    Abstract: 15KV A115-A C101 IEC-61000-4-2 JESD22 JESD97 STG4259 STG4259BJR
    Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:


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    stg4259flip-chip11iec-61000-4-2stmicroelectronics diode marking code+615kva115-ac101jesd22jesd97stg4259bjr PDF

    Contextual Info: STN951 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package 4 3 1 Applications 2


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    stn951ot-223 PDF

    B130NS04ZB

    Abstract: STB130NS04ZBT4 STP130NS04ZB P130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STW130NS04ZB P130NS0
    Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A


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    stp130ns04zbstb130ns04zb-1stb130ns04zbstw130ns04zb+7o-220/i2/d2pak/to-247o-247b130ns04zbstb130ns04zbt4p130ns04zbjesd97p130ns0 PDF