03NO88 Search Results

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

N3NE

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE DATE SYM 06FE86 RELEASED 06 F E 8 6 REVISED 03JN86 11MY87

Contextual Info: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

C5125

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. 8 6 7 5 4 2 3 PART NO. 1 ZONE DATE SYM REVISION RECORD

BUK9212-55B

Contextual Info: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to