03NG60 Search Results

Contextual Info: BUK95/9610-100B TrenchMOS logic level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK95

Abstract: BUK9610-100B
Contextual Info: D2 PA K BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

03ng60

Contextual Info: BUK95/9610-100B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK95

Abstract: BUK9510-100B
Contextual Info: TO -22 0A B BUK9510-100B N-channel TrenchMOS logic level FET Rev. 3 — 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to