03AP91 Search Results

Contextual Info: 7 8_ THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE

PHD22NQ20T

Abstract: 12882
Contextual Info: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features