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    TE Connectivity

    TE Connectivity 03-AJ100A0225CXX1

    Thick Film Resistors - SMD Fork tipped sensor, integral electronics, 115 - 230 VAC input, DPDT 10 A relay output, and a 2.25 inch activation point
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    Avnet Abacus 03-AJ100A0225CXX1 143 Weeks 1
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    TE Connectivity 03-AJ100A1200CXX1

    TE Connectivity
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    TE Connectivity 03-AJ100A0600CXX1

    TE Connectivity Fork tipped sensor, integral electronics, 115 - 230 VAC input, DPDT 10 A relay output, and a 3 inch activation point
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    Sager 03-AJ100A0600CXX1
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    Avnet Abacus 03-AJ100A0600CXX1 143 Weeks 1
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    03AJ10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PHB29N08T

    Abstract: PHP29N08T
    Contextual Info: PHP/PHB29N08T TrenchMOS standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 TO-220AB


    Original     		php/phb29n08tphp29n08to-220abphb29n08t+4ot404mbb076mbk116mbk106 PDF

    PHP29N08T

    Contextual Info: PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 — 12 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		php29n08t PDF

    PHB29N08T

    Contextual Info: PHB29N08T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		phb29n08t PDF

    03aj10

    Abstract: PHB29N08T
    Contextual Info: PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 — 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		phb29n08t771-phb29n08t/t303aj10 PDF

    PHB29N08T

    Contextual Info: PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 — 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		phb29n08t PDF