03DEC2004 Search Results

Contextual Info: TH I S DRAW ING EL IS UNPUBLI SHED. COPYRI GHT - R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R ON I C S CORPORATI ON. ALL R I GHT S LOC R E V 1S I O N S D I ST RES ERVE D. p LTR D E S C R 1PTI ON DATE DWN APVD A EH 10 - 0 4 7 8 - 0 4 03DEC2004

Contextual Info: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

C4858

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

10858

Abstract: Powersso-12
Contextual Info: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

NAND01G-A

Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

ST9036

Abstract: ST90R30 ST90R50 ST72311B Alternative st90t36 ST90T40 ST72F324 ST72F63BK4 ST52T440
Contextual Info: PRODUCT TERMINATION NOTICE PTN CMG-MCD/04/841 Old technologies termination from Rousset Fab 2004/12/6 PTN CMG-MCD/04/841 Product s terminated see attached list Reason for termination Rousset 6" Fab closure Rational for termination Rationalisation of low-running devices due

A0-A21

Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
Contextual Info: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

smd transistor j210

Abstract: SMD R220 transistor j210 J205 J206 TS615 TS616
Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on

CR10

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
Contextual Info: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

ISO7637

Abstract: JESD97 VND810PEP-E VND810PEPTR-E VNQ810PEP-E Powersso-12
Contextual Info: VND810PEP-E Double channel high side driver Features Type RDS on IOUT VCC VNQ810PEP-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection

fbga63 package

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

AI09

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

NS4159

Abstract: 528-byte
Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage

USOP48

Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5nV/√Hz ■ High output current: 420mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420V/µs ■ -3dB bandwidth: 40MHz @ gain = 12dB on

TFBGA55

Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area

smd transistor j210

Abstract: SMD R220 J303 transistor j210 F2230 J207 J210 smd marking f2 J205 J206
Contextual Info: TS616 Dual wide band operational amplifier with high output current Features • Low noise: 2.5 nV/√Hz ■ High output current: 420 mA ■ Very low harmonic and intermodulation distortion ■ High slew rate: 420 V/µs ■ -3dB bandwidth: 40 MHz @ gain = 12 dB on