034R Search Results

UniOhm

Abstract: SCRA032R SCRA024R 034R Chip Resistors arrays 024R
Contextual Info: Thick Film Chip Resistors Arrays Lead Free-Convex Uniohm Corporation Thick Film Chip Resistors Arrays (Lead Free-Convex) SCRA024R (0402 4 Elements 024R) 034R (0603 4 Elements 034R) DIMENSION RATINGS SCRA022R (0402 2 Elements 022R) SCRA032R (0603 2 Elements 032R)

lr257

Abstract: 024C
Contextual Info: □ REEL DIMENSION mm w Dimension of Bulk Case 110(1 ) Bulk case was stertdBrdlzed In Mar. 1992(EIA-7201 ) Unit:mm TYPE SIZE A 7 m &\ 2.0di).5 B C 13.&2.0 21+0.5 0603 0805 10" m m 2.040.5 13UH2J0 21±0^ 1206 13” 20K/Ree3 2.0+0.5 13.5+2.0 21±0.5 1210 034R

UniOhm

Abstract: cra034r 0603 uniohm elements Chip Resistors arrays CRA024R CHIP RESISTORS uniohm
Contextual Info: Thick Film Chip Resistors Arrays Convex Uniohm Corporation Thick Film Chip Resistors Arrays (Convex) CRA024R (0402 4 Elements 024R) 034R (0603 4 Elements 034R) RATINGS 1 Thick Film Chip Resistors Arrays (Convex) Uniohm Corporation CRA022R (0402 2 Elements 022R)

LXXXXXXXX

Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
Contextual Info: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er

Contextual Info: i|g; m I | • ''• d m r 1 M L HIGH-SPEED 3.3V 16K x 36 | SYNCHRONOUS PIPELINED DUAL-PORT STATIC ra m PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access

Contextual Info: 1»ill 1IFV1F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access

Contextual Info: 1» i l l 1 I F V 1 F III 11 Jl 1 ‘! S y P r • L HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3579S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location

CRA034R

Contextual Info: Thick Film Array Chip Resistor—CRA Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy)

Contextual Info: V CYPRESS CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features True dual-ported m em ory cells which allow sim ulta­ neous access of the same m em ory location 16K x 36 organization CY7C056V 32K x 36 organization (CY7C057V)

Flyback Transformers SANYO TV

Abstract: SMC/A5 GNA mosfet
Contextual Info: Application Report SNVA686 – March 2013 LM5023-2EVM Notebook Adapter Terry Allinder . ABSTRACT 1 2 3 4 5 6 7 8 9 1 Contents

Cr25 10M

Contextual Info: ISO 9001:2000 Certified by Det Norske Veritas 3261-2006-AQ-RGC-RvA ISO 14001:2004 Certified by Det Norske Veritas 3262-2006-AE-RGC-RvA Thick Film Chip Resistors How to Order Thick Film Chip Resistors CR 01,02,03,05,06,12,18,20,25 STRUCTURE AND DIMENSIONS

027R

Abstract: 351N 70V3579 A12L IDT70V3579 IDT70V3579S
Contextual Info: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V I/O PRELIMINARY IDT70V3579S Features: * * * * * * True Dual-Port memory cells which allow simultaneous access o f the same memory location High-speed clock to data access

Contextual Info: -r Recommended P.C.B Layout Component Side 070008FB01 5 Q 0 3 3 4 R 1. Selective plating ’S1,—0 5 u ” Min. gold in c o n ta c t a r e a / 100 u” Min. Tin in solder area. ’S2P—Gold flash in c o n ta c t a r e a / 100 u” Min. Tin in solder area.

Contextual Info: IVidcam 40KSeries Surface M ountToroidallnductors SwitchmodePower Features P a rt L piH (1) N o. + f-2 0 % S e rie s (2) 40000R 0 .3 9 5 0 .0 2 2 (o h m s ) ADC L (p H , M in ) V ie w P a ra lle l (3) (A m p s ) P a ra lle l (4) 0 .0 0 6 5 .5 0 .2 8 1 0.41

peugeot 206

Abstract: volkswagen renault mitsubishi L200 NISSAN renault megane peugeot peugeot 406 peugeot 307 renault scenic
Contextual Info: Nackstödsfäste för Tablet DVD. För skärm med skruvfäste på undersidan, sk kamerafäste med tum “ -gänga. Till monteringen har använts ett nackstödsfäste för skärm med kamerafäste. Tablet DVD på plats. Multimedia och underhållning i bilen

024c

Abstract: EIA-720 028R
Contextual Info: O CRA034C 0603 4 Elements 034C □ CRA024C (0402 4 Elements 024C) Elecfrode:(Ag/Pd) Protective coating(glass) Alumina Substrate Plating(Ni+Sn/Pb) Unit: mm \D1MENSI0N L W T Y P E \x ¿1 H ¿2 P Q 034C(0603) 3.20± 020 1.60+ 0.20 0.50± 0.10 0.35+ 020 0.40+ 020

024C

Contextual Info: n ! n* CONSTRUCTION Protective coating Middle Tenuination: Ni ptating film (glass) Electrode: (Ag/Pd) High purity alu mina substrate — Resistive elem ent Outer Termination: (Sri/Pb plating film) IH APPLICATION: Telecommunication equipments. Radio and Tape recorders, TV tuners,

EIA-720

Abstract: CR02 CR05 HO-22
Contextual Info: RATINGS TYPE Rated Power at 7010 Max Working Vottag. Mk Overload Voltage TX.R PPHTCJ ±25 CR02 (D4D2 UttSV 25V Resistance Range FtM%| 50V ±25 {om j 0.1 V/ 50V (DB0&) 0.1251 50V CROfi (1210} 0.333V 100V 0.5W 100V (2512) 100V 50mÜ iftox n SDmiJ fox n 5Dmfj fox

Contextual Info: _L _L_ REV. ECN. NO. X5 AU TO C AD G EN ER A TED DRAW ING, DO N ’T CHAN G E B Y HAND UPPER PORT LED#: 17.16 [.676] -UPPER PORT LED#1 2 8 .1 2 [1.1 0 7 ] APPD. L.C. WU DATE CODE PORT A PORT LOWER PORT LED NOTES: UNLESS OTHERWISE SPECIFIED. 1. CONNECTOR TO COMPLY WITH CFR TELECOMMUNICATION

cra034r

Abstract: rh 024c 064R 024R
Contextual Info: Thick Film Array Chip Resistor—CRA Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy)

Compostar RESISTOR

Contextual Info: Thick Film Chip Resistor Array RA03 0603SIZE 4-ELEMENTS RA02 (0402SIZE 4-ELEMENTS) FEATURES 1. High density SMD packaging gives higher productivity and reduced assembly costs. 2. Suitable for flow and reflow soldering. 3. Suitable for automatic surface mount.

CRN028R

Abstract: CR1218 55N25 resistance r200 1 1w smd R004 MCR0603 SCRN028R CR0805 CR1206 CR2010
Contextual Info: SMD THICK FILM CHIP RESISTORS 01 C O M P A N Y P R O FILE 02 SMD T H IC K FILM C H IP R E S IS T O R S 05 T H IC K FILM LO W OHM C H IP R E S IS T O R S 06 T H IC K FILM HIG H OHM C H IP R E S IS T O R S 07 T H IC K FILM C H IP A R R A Y S C O N V E X 08

Contextual Info: 1 » i l l 1 IF V 1 F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access

bU1011

Abstract: 026R ca2dc CY7C09569V
Contextual Info: CY7C09569V CY7C09579V PREUM INAm 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3V Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location • 2 Flow-Through/Pipelined devices