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    032N06N Search Results

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    Rochester Electronics LLC IPI032N06N3GAKSA1

    MOSFET N-CH 60V 120A TO262-3
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    DigiKey IPI032N06N3GAKSA1 Bulk 871 168
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    Infineon Technologies AG IPP032N06N3GXKSA1

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey IPP032N06N3GXKSA1 Tube 341 1
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    Avnet Americas IPP032N06N3GXKSA1 Tube 8 Weeks 500
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    Mouser Electronics () IPP032N06N3GXKSA1 504
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    IPP032N06N3GXKSA1 404
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    Rochester Electronics IPP032N06N3GXKSA1 5,710 1
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    TME IPP032N06N3GXKSA1 75 1
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    Ameya Holding Limited IPP032N06N3GXKSA1 500
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    Rutronik IPP032N06N3GXKSA1 Tube 200 50
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    Chip One Stop IPP032N06N3GXKSA1 Tube 500 0 Weeks, 1 Days 1
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    EBV Elektronik IPP032N06N3GXKSA1 18 Weeks 500
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    Infineon Technologies AG IPI032N06N3-G

    MOSFET N-CH 60V 120A TO262-3
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    Infineon Technologies AG IPP032N06N3GHKSA1

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey IPP032N06N3GHKSA1 Tube 500
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    Vyrian IPP032N06N3GHKSA1 4,268
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    Infineon Technologies AG IPI032N06N3GAKSA1

    MOSFET N-CH 60V 120A TO262-3
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    DigiKey IPI032N06N3GAKSA1 Tube
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    Rochester Electronics IPI032N06N3GAKSA1 11,371 1
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    TME IPI032N06N3GAKSA1 1
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    EBV Elektronik IPI032N06N3GAKSA1 53 Weeks 500
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    Vyrian IPI032N06N3GAKSA1 2,872
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    032N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    032N06n

    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 3.2 mW ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPA032N06N3 IEC61249-2-21 PG-TO220-3-31 032N06N 032N06n PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Contextual Info: Type IPB029N06N3 G 032N06N3 G 032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Contextual Info: IPB029N06N3 G Type 032N06N3 G 032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3 PDF

    032N06n

    Abstract: IPA032N06N3 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n
    Contextual Info: 032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.2 mΩ ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPA032N06N3 PG-TO220-3-31 032N06N 032N06n 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n PDF