0300L TO92 Search Results

0300L

Abstract: 70217 marking code Sk transistors
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V

SIVN0300L

Abstract: 0300l VN0300 0300L to92
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

0300L

Abstract: VN50300T VN50300L
Contextual Info: VN50300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) VN50300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

VP0300L

Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

0300L

Contextual Info: VN0300 LJ} Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON B V dqs (max) 30V 1.2£i If Standard Commercial Devices 1.0A Free from secondary breakdown Low pow er drive requirement □ E a s e of paralleling

VN50300L

Abstract: VN50300T
Contextual Info: VN50300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) VN50300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

VNDO50

Abstract: 0300L VN50300L VN50300T vishay siliconix code marking week code vishay SILICONIX
Contextual Info: VN50300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) VN50300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

0300l

Abstract: Q700
Contextual Info: VN50300L/VN50300T_ Vishay Siliconix VISHAY N-Channel 500-V D-S MOSFETs PRODUCT SUM MARY Part Number V (B R )D SS M i n ( V ) VN50300L VGS<lh)(V) Id (A) 300 @ VGs = 10 V 1 to 4.5 0.033 300 @ VGs = 10 V 1 to 4.5 0.022 Max (Q) lD S (o n >

25Q10

Contextual Info: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

0401L

Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

AN804

Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

s4 vishay

Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities

Contextual Info: Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0201L

Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not