02N60S5 Search Results

02N60S5 Price and Stock

Filter by Manufacturer

Infineon Technologies AG


Infineon Technologies AG SPD02N60S5 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPD02N60S5		292			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	SPD02N60S5		19			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPU02N60S5BKMA1 Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPU02N60S5BKMA1		26,580		1	1 - 10 - 100 $0.81 1000 $0.67 10000 $0.60	Buy Now
Vyrian	SPU02N60S5BKMA1		9,716			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD02N60S5BTMA1 MOSFET N-Channel 600V 1.8A (Tc) TO-252-3 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPD02N60S5BTMA1		13,370		1	1 - 10 - 100 $0.51 1000 $0.42 10000 $0.38	Buy Now
Infineon Technologies AG SPP02N60S5 MOSFET N-Channel 600V 1.8A (Tc) TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPP02N60S5		5,264		1	1 - 10 - 100 $0.61 1000 $0.51 10000 $0.45	Buy Now
Infineon Technologies AG SPU02N60S5 COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SPU02N60S5		4,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 02N60S5 price and stock on Findchips.com

02N60S5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +5q67040-s4181 02n60s5 transistor 02n60s5 02n60 q67040-s4212	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 02n60s5 02n60	PDF
SPB02N60S5 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	spb02n60s5 p-to263-3-2 q67040-s4212 02n60s5	PDF
02N60 Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163 Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors	Original	spn02n60s5 vps05163 ot-223 02n60s5 +3q67040-s4207 02n60 gps05560	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251 +2q67040-s4226 02n60s5	PDF
02N60S5 Abstract: SPB02N60S5 SPP02N60S5 Contextual Info: 02N60S5 02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +302n60s5 q67040-s4181 p-to263-3-2	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu02n60s5 spd02n60s5 p-to251-3-1 q67040-s4226 +5p-to252 q67040-s4213 02n60s5 gpt09051 transistor 02n60s5	PDF
02N60S5 Abstract: SPN02N60S5 VPS05163 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3	Original	spn02n60s5 ot-223 q67040-s4207 vps05163 +102n60s5	PDF
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	od-80 ot-223 ot-89 stk and str integrated circuits +9transistor smd zg 1e str-z4579 turuta 6 pin transistor smd code pa transistor 5d smd elm85361a stk and str integrated circuits, 2011 edition 5g smd transistor 15d diode smd code	PDF
Q67040-S4181 Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +7q67040-s4181 02n60s5 02n60 q67040s4181 q67040-s4212 transistor 02n60s5 p-to-263-3-2	PDF
SPP02N60S5 Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +8sppx5n60s5/spbx5n60s5 q67040-s4181 02n60s5 k 117 smd diode 44a spbx5n60s5 02n60 transistor 02n60s5	PDF
Contextual Info: 02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors	Original	spn02n60s5 vps05163 ot-223 02n60s5 +1q67040-s4207	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +5p-to252 02n60s5 q67040-s4226 q67040-s4213 02n60	PDF

SPN02N60S5 Contextual Info: 02N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 3 Ω 0.4	Original	spn02n60s5 ot-223 vps05163 q67040-s4207 +102n60s5	PDF
SPB02N60S5 Abstract: SPP02N60S5 02N60S5 siemens 230 98 O Contextual Info: 02N60S5 02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +4p-to263-3-2 02n60s5 q67040-s4181 siemens 230 98 o	PDF
SPB02N60S5 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	spb02n60s5 pg-to263 q67040-s4212 02n60s5	PDF
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 q67040-s4213 02n60s5 smd 0306 package 02n60	PDF
SPP02N60S5 Contextual Info: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp02n60s5 p-to220-3-1 pg-to220-3-1 q67040-s4181 +102n60s5	PDF
Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +2q67040-s4226 02n60s5	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Contextual Info: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +8q67040-s4226 02n60s5 transistor 02n60s5 02n60 pg-to252-3-11 transistor smd marking code transistor smd marking code 1a transistor smd marking code 42	PDF
02n60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
SPB02N60S5 Abstract: SPP02N60S5 02N60 02N60S5 02n60s Contextual Info: 02N60S5 02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spp02n60s5 spb02n60s5 sppx5n60s5/spbx5n60s5 p-to220-3-1 +502n60s5 q67040-s4181 p-to263-3-2 02n60 02n60s	PDF
SPB02N60S5 Abstract: SPP02N60S5 Contextual Info: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp02n60s5 spb02n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4181 q67040-s4212	PDF

02N60S5 Search Results

02N60S5 Price and Stock

Infineon Technologies AG SPD02N60S5

Infineon Technologies AG SPU02N60S5BKMA1

Infineon Technologies AG SPD02N60S5BTMA1

Infineon Technologies AG SPP02N60S5

Infineon Technologies AG SPU02N60S5

02N60S5 Datasheets Context Search

02n60s5

02N60S5

SPB02N60S5

02N60

SPD02N60S5

02N60S5

02N60S5

02N60S5

STK and STR integrated circuits

Q67040-S4181

SPP02N60S5

02N60

02N60S5

SPN02N60S5

SPB02N60S5

SPB02N60S5

02N60S5

SPP02N60S5

02n60s5

02n60

SPB02N60S5

SPB02N60S5