02DEC2005 Search Results

Contextual Info: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

M29W128FL

Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

A0-A21

Abstract: JESD97 M29DW641F TFBGA48
Contextual Info: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

apdu

Abstract: ISO7816 AN2271 ISO7816-12 NAND flash interface ISO7816-1 ST72651 ISO-7816
Contextual Info: AN2271 APPLICATION NOTE Ekey-Udisk solution Introduction This document describes a firmware implementation for an Ekey-Udisk device based on ST72651. The software is divided into 3 parts: ● USB management: the main USB operations are managed by a USB library with USB

STB55NF06

Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Asynchronous Random/Page Read – Page width: 8 Words

D70N02L

Abstract: STD70N02L STD70N02L-1 JESD97
Contextual Info: STD70N02L STD70N02L-1 N-channel 24V - 0.0068Ω - 60A - DPAK - IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD70N02L 24V <0.008Ω 60A STD70N02L-1 24V <0.008Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

A0-A21

Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

P55nf

Abstract: p55nf06 OF P55NF06 b55nf Mosfet P55NF06 for p55nf06 P55nf*06 P55NF0 B55NF06 P55NF06FP
Contextual Info: STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features TAB TAB Order code VDSS RDS on max. 60 V < 0.018 Ω STB55NF06 STP55NF06 ID 50 A 3 1

Contextual Info: 4 TH 1S DRAW 1NG IS UNPUBL1SHED . C COPYR1GHT 20 3 RELEASED FOR PUBLICATION 2 20 LOC D I ST BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS P LTR A MATER CONNECTOR AS S E MBL Y : REAR BODY: GL AS S R I L L E D P O L Y E S T E R , PBT PLUNGER : ALUMINUM AL LOY

N6796

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

M29W128

Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Numonyx

Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

M29DW640F

Abstract: A0-A21 JESD97 TFBGA48
Contextual Info: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

A0-A21

Abstract: JESD97 M29DW641F TFBGA48
Contextual Info: M29DW641F 64 Mbit 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP/WP=12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words

marking EG

Abstract: AN1751 Date Code Marking STMicroelectronics Part Marking STMicroelectronics AN1235 ESDA14V2-2BF3 JESD97 M033
Contextual Info: ESDA14V2-2BF3 ASD Application Specific Devices Dual bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones

ESDA14V2-2BF3

Abstract: AN1751 AN2348 JESD97
Contextual Info: ESDA14V2-2BF3 Quad bidirectional Transil array for ESD protection Features • 2 bidirectional Transil functions ■ ESD protection: IEC 61000-4-2 level 4 ■ Stand off voltage: 12 V Min. ■ Low leakage current ■ Very small PCB area < 1.5 mm2 ■ 400 microns pitch

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words