02DEC04 Search Results

Contextual Info: AMP 1471-9 REV 31MAR2000 2 1 LOC EH DIST R E V IS IO N S 00 P ONE CABLE PACKAGED IN A POLY BAG. DIMENSIONS SPECIFIED. ARE MAXIMUM UNLESS LTR K DESCRIPTION REV - DATE ECR — 0 4 —0 0 0 2 9 2 DWN 02DEC04 APVD LHS cc OTHERWISE D CABLE: UNSHIELDED 24 AWG, 4 TWISTED PAIRS,

KBL005

Abstract: KBL06 KBL04 KBL01 KBL02 KBL10 J-STD-002B KBL 10 bridge rectifier
Contextual Info: KBL005 thru KBL10 Vishay Semiconductors Single-Phase Bridge Rectifier Case Style KBL Major Ratings and Characteristics IF AV 4A VRRM 50 V to 1000 V IFSM 200 A IR 5 µA VF 1.1 V Tj max. 150 °C ~ ~ ~ ~ Features Mechanical Data • • • • • Case: KBL

gbl10

Contextual Info: GBL005 thru GBL10 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 50 V to 1000 V IFSM 150 A IR 5 µA VF 1.0 V Tj max. 150 °C C ase Type G B L ~ ~ ~ ~ Features Typical Applications

Contextual Info: 1 4 COTES DE . O — DENUDAGE L— 1 1 • ^7 DECOUPE P/N DE . 5^ PANNEAU ANP CABLE 134576-1 RG 59 134576-2 - RG 0 I NT RG 62 6.6 58 5.5 B NUMERO O B S E R V A T ION D ESC R IPT IO N 1 9 — BY AMP INCORPORATED ALL RIGHTS RESERVED. AMP PR0D0CT5 COVERED BY

Contextual Info: GBLA005 thru GBLA10 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 50 V to 1000 V IFSM 120 A IR 5 µA VF 1.0 V Tj max. 150 °C C ase Type G B L ~ ~ ~ ~ Features Typical Applications •

DIN50014

Abstract: IEC60065
Contextual Info: ILD3/ ILQ3 Vishay Semiconductors Optocoupler, Phototransistor Output Dual, Quad Channel Features Dual Channel • Current Transfer Ratio at IF = 1.6 mA • Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. • Lead-free component • Component in accordance to RoHS 2002/95/EC

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T B Y TYCO E LE C TR O N IC S P U B L IC A T IO N R IG H T S - RESERVED. C O R P O R A TIO N . [ . 035] [ . 329] A M P IN C O R P O R A T E D CUSTOM ER SERVICE SYSTEMS FOR A D D IT IO N A L

G2SB20

Abstract: G2SB60 G2SB80 J-STD-002B
Contextual Info: G2SB20, G2SB60 & G2SB80 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics C ase Type G B L IF AV 1.5 A VRRM 200 V, 600 V, 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ ~ Features Typical Applications

Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 608 Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance By Jess Brown INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. - DIST AD BY TYCO ELECTRONIC5 CORPORATION. REVISIONS 00 LTR DESCRIPTION 3 .0 5 [.120] TYP 1.27 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] GOLD AT POINT OF MEASUREMENT, 0 . 0 0 0 5 1 [ . 0 0 0 0 2 0 ] MIN AT THE

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - LOC RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. ALL RIGHTS RESERVED. DIST REVISIONS 00 AD LTR AREA G EC 0G3C B REF -Z- 0.76 [.030]TYP 0.64 [.0 2 5 ] [ . . 0 o o [ . 0 @- - - — * -^D— d> - HOLD DOWN TIPS

DIN50014

Abstract: IEC60065
Contextual Info: ILD3/ ILQ3 Vishay Semiconductors Optocoupler, Phototransistor Output Dual, Quad Channel Features Dual Channel • Current Transfer Ratio at IF = 1.6 mA • Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. • Lead-free component • Component in accordance to RoHS 2002/95/EC

amphenol 74868 ug

Contextual Info: THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER,SIUVER PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM 3. MECHANICAL: A. DURABILITY: 500 CYCLES MIN. B. TEMPERATURE RANGE: - 65’C to +165’C

1600903-1

Abstract: 1600960 b029 160091
Contextual Info: 501-597 Qualification Test Report 02Feb05 Rev O EC 0990-0122-05 Multi-Beam XL* Cable Panel Mount and Squeeze-To-Release Receptacles 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Multi-Beam XL* Cable Panel Mount and Squeeze-ToRelease Receptacles to determine its conformance to the requirements of Product Specification 1082157 Revision A.

EIA-364-5

Abstract: EIA-364-70 AWG wires tensile test requirements EIA-364-20 EIA-364-21 EIA-364-28 EIA-364-13 connector "EIA-364-98" 108215
Contextual Info: Product Specification 108-2157 05Apr06 Rev C Multi-Beam XL* Cable Panel Mount and Squeeze-To-Release Receptacles 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics MultiBeam XL* Cable Panel Mount and Squeeze-To-Release Receptacles.

AN608

Abstract: RG capacitor AN605 Si4892DY POWER MOSFET siliconix an605
Contextual Info: AN608 Vishay Siliconix Power MOSFET Basics: Understanding Gate Charge and Using It To Assess Switching Performance Jess Brown INTRODUCTION This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone

waveguide selective switch

Abstract: quartz optical properties MSI nichrome resistor A1203 Thin Film Capacitors AI and Au wirebonding NICHROME wire 0.005 mm2 microwave circulators AT*T Wireless Services coupler AT*T coupler conductor
Contextual Info: MIC Technology Vishay Electro-Films An Introduction To Substrate PIMICTM Passive Intergrated Micro-Electron Interconnect Circuitry Technology Thin film microwave integrated circuits have been evolving from a simple substrate medium which carries microwave/