02APR1 Search Results

PE-76

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT By - RELEASED FOR PUBLICATION 5 6 4 2 3 - ALL RIGHTS RESERVED. REVISIONS LOC DIST AA 00 LTR C1 0.64 DESCRIPTION REVISED PER DATE DWN RK HMR 02APR11 ECO-1 1 - 0 0 5 1 40 APVD MATERIAL: HOUSING - PO LYESTER MOLDING CO M POUND, COLOR:

stahl

Contextual Info: 4 TH IS DRAWING IS 3 U N P U B LIS H E D . RELEASED FOR PUBLICATION 2 - LOC ALL RIGHTS RESERVED. COPYRIGHT 1987 D IST REVISIONS H By - LTR K2 DESC R IPTIO N R EVISED P ER DWN DATE E C O -1 1 - 0 0 5 2 9 4 02APR11 RK APVD HMR TEIL 2 TEIL 1 31, ft D t e —+ •

Contextual Info: D R A W IN G IS U N P U B L IS H E D . RELEASED FO R A LL P U B L IC A T IO N LOC RIGHTS HG RES ER VE D . C O P YR IG H T D IS T REVISIONS D E S C R IP T IO N H3 Add new dash no. -4 KH 02APR13 JP D A A B BOOT: BLACK 2 PLACES 2 PLACES PAIRS FIBER 1. LOSS OF

Contextual Info: D R A W IN G IS U N P U B L IS H E D . RELEASED FOR A LL P U B L IC A T IO N R IG H TS D IS T LOC RESERVED. R EVISIO N S H C O P Y R IG H T D E S C R IP T IO N E1 REVISED PER DWN ECO-11-005294 APVD RK HMR 02APR11 D 4 2 2 A Ik BLACK BLACK BLUE BLACK BLUE u

2-164045-1

Abstract: NE-48
Contextual Info: 4 2 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T R EU EA SED FO R PU B U IC ATIO N R EVISIO N S - >- AUU RIGHTS R ESER VED . By - H LTR W2 88,9 D E S C R IP T IO N DATE REVISED PER E C O - 1 1 - 0 0 5 2 9 4 DWN APVD RK HMR 02APR1 85,4 83,4

94V circuit board

Contextual Info: 4 T H IS D R A W IN G IS 2 3 U N P U B L IS H E D . RELEASED FOR ALL P U B L IC A T IO N R IG H T S LOC C O P Y R IG H T D IS T REVISIONS H RESERVED. 7.0 D E S C R IP T IO N REVISED PER E C O -11-005294 RK H M R 02APR11 NOTES: D 1. TO LERAN CES UN LE S S 2.

281934-2

Abstract: 281934-3 281934-4 CSI spec
Contextual Info: TH IS DRAWING IS A C O NTRO LLED DO CUM ENT. LOC R EVISIO N S D IS T p I LTR H1 D E S C R IP T IO N DATE DWN 02APR11 REVISED PER E C O - 1 1 - 0 0 5 0 3 3 APVD RK HMR CM O -H O O CM •G- GOMMA ROSSO-RED n i T i j y D IA M . IS O L A N T E IN S . O mm

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . 2 4 RELEASED FOR PUBLICATION - - R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT H By - P LTR D E S C R IP TIO N Y2 REVISED PER DATE ECO-1 1-005294 DWN APVD RK HMR 02APR11 D D NOTES: FOR MINI-APPLICATOR-12500 PCS REEL.

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL By C O P Y R IG H T P U B L IC A T IO N R IG H TS LOG R E V IS IO N S D IS T RESERVED. - LTR D E S C R IP T IO N IN IT IA L NOTE: DATE RELEASE DWN A PVD GSK RH 02APR1 1. PACKAGING ACC. TO TE SPEC. 1 07-1 8032

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 2 3 R E L E A S E D F O R P U B L IC A T IO N LOG ALL RIGHTS R ESER VED . CO PYRIG H T REVISIO N S D IS T H D E S C R IP T IO N P3 REVISED PER E C O - 1 1 - 0 0 5 2 9 4 RK HMR 02APR11 FRONT PLATE C U T - O 02,3

1775469-2

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY COPYRIGHT LOC ALL RIGHTS RESERVED. - REVISIONS DIST DW A1 Í i t o CD LO KÜ REVISED PER ECO-11-005301 02APR11 DWN APVD RK HMR o o LO DATE i i o DESCRIPTION LTR 2.35 LD O ♦ lO O O 1.50 t t 2. D IM

m2509

Abstract: LR7189 amp
Contextual Info: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By 2 P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. - LTR J2 D E S C R IP T IO N NEW D R A W IN G PER -019045 DWN A PVD 02APR12 KH DR BODY D INSULATION SERRATIONS

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: THIS IT LOC DRAWING IS IS S U B J E C T A C O N T R O L L E D DOCUMENT FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C H AN G E AND T HE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N SHOULD BE C O NT A CT ED FOR THE L A T E S T R E V I S I O N .

Contextual Info: VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see

Contextual Info: LTO 100 www.vishay.com Vishay Sfernice Power Resistor Thick Film Technology FEATURES • 100 W at 25 °C case temperature heatsink mounted • Direct mounting ceramic on heatsink • Broad resistance range: 0.015  to 1 M • Non inductive • TO-247 package: Compact and easy to mount

3KBP005M

Contextual Info: 3KBP005M thru 3KBP08M www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit board • High surge current capability • High case dielectric strength

CHPHT

Contextual Info: CHP, HCHP www.vishay.com Vishay Sfernice High Stability Resistor Chips < 0.25 % at Pn at 70 °C during 1000 h Thick Film Technology FEATURES • CHP: Standard passivated version for industrial, professional and military applications • Robust terminations

Contextual Info: SA, SB, SC www.vishay.com Vishay Sfernice Current Sensing Wirebondable Thin Film Chip Resistors FEATURES • Low ohmic value down to 0.05  • Tolerance down to 1 % • Stability 0.1 % < 2000 h at Pn at + 70 °C • Low noise < - 35 dB • Low TCR 100 ppm/°C

Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30

Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 3025 MHz 4.7 VDC 5.0 5.25 VDC +3.0 dBm 15 25 mA Pushing: 2.0 MHz/V Pulling, all Phases: 8.0 MHz pk-pk -95 dBc/Hz Lower Frequency: Upper Frequency: 3125 Tuning Voltage:

GBU6B

Contextual Info: GBU6A, GBU6B, GBU6D, GBU6G, GBU6J, GBU6K, GBU6M www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit boards • High surge current capability