02APR03 Search Results

A0526

Abstract: 3-221132-6 8218 DIE 2.5c-2v 02APR03
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 16 LTR DESCRIPTION RDW & DATE DWN 02APR03 REV PER 0S1 A — 0 5 2 6 - 0 2 APVD KW KW DL[ A USE PRO-CRIMPER II: 3 5 4 9 4 0 - 1

Contextual Info: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. To + 125°C with voltage derating. New extended range offerings.

Contextual Info: TLW.8600 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 47 AD LTR DESCRIPTION DATE REVISED PER EC 0 S 12- 04B 5- 02 A A A A A A D M A T E R IA L : H O U S IN G : CONTACT:

M48Z35

Abstract: M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:

M48Z35AV

Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ BATTERY LOW FLAG (BOK) ■ AUTOMATIC POWER-FAIL CHIP DESELECT

t2d03

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED PO R ALL C AMP C O P Y R IG H T 1471-9 2D 03 REV 3 1 MAR2Q0Û BY TY C O E LE C T R O N IC S C O R P O R A T IO N . P U B L IC A T IO N R IG H T S RESERVED. - - 1 2 R E V IS IO N S D IS T LOC J

FES8JT

Abstract: FES8GT FES8AT
Contextual Info: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

M48Z58

Abstract: M48Z58Y M4Z28-BR00SH SOH28
Contextual Info: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

M48Z35

Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

M48Z35AV

Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)

M48Z58

Abstract: M48Z58Y M4Z28-BR00SH SOH28
Contextual Info: M48Z58 M48Z58Y 5.0V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

TLMB2100

Abstract: TLMG2100 TLMO2100 TLMP2100 TLMS2100 TLMY2100 Water Level Indicator 555
Contextual Info: TLM.210. VISHAY Vishay Semiconductors MiniLED \ Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale,

TLWR8900

Abstract: TLWY8900
Contextual Info: TLW.8900 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP

M48Z129V

Abstract: M48Z129Y
Contextual Info: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z129V

Abstract: M48Z129Y
Contextual Info: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

M48Z58

Abstract: M48Z58Y M4Z28-BR00SH SOH28
Contextual Info: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

amp tyco applicator

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D B A AMP 1 4 71-9 REV 31MAR2000 HA ALL RIGHTS RESERVED. —»— LOC DIST REVISIO NS AF 50 P LTR H 1 / 2\ 3 REV & DESCRIPTION DATE OWN APVD REDRWAN PER 0 G 3 A - 0 2 0 0 - 0 2

M48Z35

Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■

FES8AT

Contextual Info: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

M48Z58

Abstract: M48Z58Y M4Z28-BR00SH SOH28
Contextual Info: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION

SOH28

Abstract: M48Z35AV M48Z35AY M4Z28-BR00SH1
Contextual Info: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)

M48Z35

Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

PTC SY

Abstract: SODIMM DDR2 Mechanical Dimensions 200POS
Contextual Info: THIS DRAWING IS U N P U BLIS H ED . COPYRIGHT 2003 2003. R E L E A S E D F O R P U B L IC A T IO N LOC A L L RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST R E V IS IO N S J LTR DESCRIPTION REVISED DATE ECR —0 6 —0 2 4 6 4 2 DWN 170C T06 APVD