Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    029N06N Search Results

    SF Impression Pixel

    029N06N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB029N06N3GATMA1

    MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB029N06N3GATMA1 2,284
    • 1 $2.68
    • 10 $1.83
    • 100 $1.28
    • 1000 $0.95
    • 10000 $0.87
    		Buy Now

    Infineon Technologies AG IPB029N06N3 G

    MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB029N06N3 G 1,663
    • 1 $2.99
    • 10 $1.93
    • 100 $1.38
    • 1000 $0.99
    • 10000 $0.91
    		Buy Now

    Infineon Technologies AG IPB029N06NF2SATMA1

    MOSFETs TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB029N06NF2SATMA1 1,155
    • 1 $1.48
    • 10 $1.11
    • 100 $0.82
    • 1000 $0.78
    • 10000 $0.75
    		Buy Now

    Infineon Technologies AG IPA029N06NXKSA1

    MOSFETs MV POWER MOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPA029N06NXKSA1 498
    • 1 $3.48
    • 10 $1.74
    • 100 $1.59
    • 1000 $1.15
    • 10000 $1.15
    		Buy Now

    Infineon Technologies AG IPI029N06N

    MOSFETs N-Ch 60V 100A I2PAK-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPI029N06N 494
    • 1 $3.05
    • 10 $1.98
    • 100 $1.46
    • 1000 $1.04
    • 10000 $0.99
    		Buy Now
    Find more 029N06N price and stock on Findchips.com

    029N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPI029N06

    Abstract: 029N06N
    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W IPI029N06 029N06N PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Contextual Info: Type 029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Contextual Info: 029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3 PDF

    IPP029N06N

    Abstract: 029n06n
    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N 50K/W IPP029N06N 029n06n PDF

    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N PDF

    IPP029N06N

    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N 50K/W IPP029N06N PDF

    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel • Qualified according to JEDEC for target applications


    Original     		IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N PDF

    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel • Qualified according to JEDEC for target applications


    Original     		IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N PDF

    029N06N

    Abstract: ipi029n
    Contextual Info: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W 029N06N ipi029n PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 029N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 029N06N 1Description TO-220-FP Features • .


    Original     		IPA029N06N O-220-FP IEC61249-2-21 PDF