024X4 Search Results

48LC2M8A1

Abstract: 16Mb SDRAM MICRON
Contextual Info: MICRON I 1 6 MEG: x4, x8 SDRAM TOtWOLOGT, INC. M T 4 8 L C 4 M 4 A 1 /A 2 S - 2 M e g x 4 x 2 b a n k s M T 4 8 L C 2 M 8 A 1 /A 2 S - 1 M e g x 8 x 2 b a n k s SYNCHRONOUS DRAM FEATURES PIN A S S I G N M E N T Top View * PCI 00-com pliant, includes CONCURRENT AUTO

TC55V4400FT-10

Contextual Info: TO SH IBA TC55V4400FT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The TC55V4400FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 4,194,304 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

L42S

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T h e ¿¿PD42S16400L, 4 216400L, 42S 17 4 00 L , 4 217400L are 4 194 304 w o r d s b y 4 b its d y n a m ic C M O S R A M s.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode, 3.3 V Power Supply The MCM54400A-V is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate