023SHOS Search Results

DD880

Contextual Info: ÛÔD D • 023ShOS a01Mb2H 1 « S I E G 88D 14624 D BUZ 48 SIEMENS AKTIENfiESELLSCHAF Main ratings N-Channel = 500 V Draln-source voltage K>s = 7,8 A Continuous drain current 4 Drain-source on-resistance ^DS on = 0,6 n Description Case Type SIPMOS, N-channel, enhancement mode

DIODE C06 15

Abstract: C67078-A1605-A2 diode c02
Contextual Info: ÛÔD D • 023ShOS a01Mb2H 1 « S I E G 88D 14624 D BUZ 48 SIEMENS AKTIENfiESELLSCHAF Main ratings N-Channel Draln-source voltage Continuous drain current Drain-source on-resistance Description Case Type K>s 4, ^D S on = 500 V = 7,8 A = 0,6 n SIPMOS, N-channel, enhancement mode

MMIC SOT 143 marking CODE 77

Abstract: MMIC marking 77 CGY50 Q68000-A8370 MMIC marking code U MARKING SOT-143 C5
Contextual Info: SIEMENS GaAs MMIC CG Y 50 D a t a s h e e t * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

74ls244 latch ic

Abstract: mpd 1026 night-vision digital goggle MIL-D-87157 2S48 74LS244 74LS245 MPD2547 TF444
Contextual Info: SIEMENS AKTIENGE S E LL S C H A F SI E M ENS 47E D • ÔS35b05 DDSb'ifiô D « S I E G MPD 2545T:41'57 GREEN MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display

Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

Contextual Info: S IE M E N S NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High D C current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) S M B T A 13 S M B T A 14

PMB2307

Contextual Info: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJL/BZL-60/-70 Advanced Inform ation • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

Contextual Info: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

AF106

Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
Contextual Info: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72

Contextual Info: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver

MPD2547

Abstract: mil std 883 latched drivers
Contextual Info: SIEMENS AKTIENGESELLS CHA F SI E M ENS 47E D • ÔS35b05 DDSb'ifiô D « S I E G MPD 2545T:41'57 GREEN MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display with Built-In CMOS Control Functions