023SBGS Search Results
023SBGS Datasheets Context Search
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Contextual Info: m G 023SbGS 0050125 1 S S I E S I E M E N S jflG-iVMf&iM.* SIEMENS AKTIENGESELLSCHAF 47E T -3 9 -/5 ' SIMOPAC M O SFET Module BSM 191 C Vos = 1000 V l0 = 28 A ^os(on) = 0.37 Q • • • • • • Power module Single switch N channel Enhancement mode |
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023sbgsc67076-a1009-a2235b050235bos | |
TRANSISTOR BC 137
Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
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023sbgsbc107bc1071q62702-c680+15 | |
transistor ac 152
Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
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235b05q60103-d121152ivq60103-x152-d+16 | |
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Contextual Info: 7" ^ 3 7 - / ¿ r 2SC » • 023SbGS 00047^4 1 « S I E G PNP Silicon Planar Transistors BSV 15 BSV16 BSV 17 - SIEMENS AKTIENGESELLSCHAF BSV 15, BSV 16 and BSV 17 are epitaxial PNP silicon planar transistors in TO 39 case {5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are |
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023sbgsbsv1662702-s42562702-s207+5 | |
bc 471
Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
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fi23sbgsq62702-c377q62702-c377-v1q62702-c377-v2+16 | |
2SC 5426
Abstract: hFE Group Q62702-S207 Q62702-S208 Q62702-S209 Q62702-S210 Q62702-S211 Q62702-S212 Q62702-S425 Q62702-S426
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fl23sbgs7-c37-q62702-s425q62702-s207+8 | |
transistor k520
Abstract: IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23 ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F
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acy32q60103-y23-eq60103-y23-fq60103-y32-e+11 | |
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Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency |
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80c517/80c53780c51780c53780c51+4 | |
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Contextual Info: SIEMENS Triple 8-Bit Analog-to-Digital-Converter SDA 9205-2 CMOS 1C Preliminary Data Features • • • • • • • Three equivalent CMOS A/D converters on chip 30-MHz sample rate 8-bit resolution No external sample & hold required On-chip input buffer for each analog channel |
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30-mhzp-lcc-68-1q67100-h5069fl235b05+3 | |
siemens ecu
Abstract: siemens ecu 100 siemens ecu 64 ecu siemens 74ABT244
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64-bit641010gs-60/-70641020gs-60/-7023sbds+6 | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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t-75-37-07235b0582532n-tspl-cc-68+8 | |
sab82288
Abstract: SAB82289 SAB 80286 16 N 82288
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a23sbdsp-dip-2020-pinsab82288+4 | |
smd transistor 6b-1
Abstract: 6B1 zener diode smd transistor 6b1 6 pin Optocoupler 1209 optocoupler ci 6pin smd transistor 335 smd L05B transistor MW 882
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il48518-plnfl535tsmd transistor 6b-1+8 | |
74LS04C
Abstract: gd5f 80515K m8ab
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fl23sfci80515k16-bit53sbd5+7 | |
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sy 320 diodeContextual Info: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values |
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o-220c67078-s1306-a3tempe96fl23sb05+2 | |
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Contextual Info: SIEMENS BUP 314 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type ^CE 1200V 52A BUP 314 C Pin 3 E Package Ordering Code TO-218AB Q67040-A4206-A2 Maximum Ratings |
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o-218abq67040-a4206-a2023sbgsfie35bo | |
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Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí: |
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g10404c509-la8-a15a535bds+1 | |
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Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be |
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64-bit/s128-kbit/sia-bidfcl80x1a-bid180x+2 | |
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Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast Page Mode Operation • Performance: • -50 -60 -70 50 60 70 ns ^RAC RAS access time |
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314400bj/bjl-50/-60/-70p-soj-26/20-5 | |
smd E6eContextual Info: ñ23SbGS □ G ciE7êl TÜ7 • SIEM ENS PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * Load dump and reverse battery protection1 80 VLoad dump * Clamp of negative voltage at output 58 Vbb- V o u t Avalanche Clamp * Short-circuit protection |
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23sbgsfi235bg5fl23sb05o-220ab/5+7 | |
Siemens diode SsiContextual Info: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vbs 800 V b 1.5 A ffDS on Package Ordering Code 8 £2 TO-220 AB C67078-S1318-A2 Maximum Ratings Symbol Parameter Values Unit A Continuous drain current |
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o-220c67078-s1318-a223sbosi23sbq5+1 | |
SAB-C501Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/20/40 MHz operating frequency 8 K x 8 ROM SAB-C501 -1R only 256 x 8 RAM Four 8-bit ports |
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sab-c50116-bitp-dip-40p-lcc-44+3 | |
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Contextual Info: SIEMENS 2-GHz-Mixer PMB 2330 Preliminary Data Bipolar 1C Features • • • • • • • Few external components Low noise Low spurious signal content High conversion transconductance Very highly isolated RF, IF and LO ports Good suppression of input signals at output |
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235b0535x45-023sbgs | |
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Contextual Info: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory |
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16-bit14-word235b05003d7d+4 | |