01N60C Search Results

01N60C Price and Stock

Filter by Manufacturer

Select Manufacturer


Setra Systems Inc. 3201N60CPS1P8R00 PRESSURE SENSOR, 3201N,0.5-4.5V NON R/M,6000PSI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	3201N60CPS1P8R00	Bulk		5 Weeks	40	1 - 10 - 100 $400.95 1000 $400.95 10000 $400.95	Get Quote
Infineon Technologies AG SPD01N60C3 Trans MOSFET N-CH 600V 0.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	SPD01N60C3		2,438		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.29 10000 $0.29	Buy Now
	SPD01N60C3		803			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPS01N60C3BKMA1 MOSFET N-Channel 600V 800mA (Tc) TO251 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPS01N60C3BKMA1		30,000		1	1 - 10 - 100 $0.50 1000 $0.42 10000 $0.37	Buy Now
Infineon Technologies AG SPU01N60C3BKMA1 Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPU01N60C3BKMA1		291,621		1	1 - 10 - 100 $0.49 1000 $0.41 10000 $0.36	Buy Now
Vyrian	SPU01N60C3BKMA1		12,697			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPS01N60C3 MOSFET N-Channel 600V 800mA (Tc) TO251 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPS01N60C3		43,500		1	1 - 10 - 100 $0.37 1000 $0.31 10000 $0.28	Buy Now
Vyrian	SPS01N60C3		9,850			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 01N60C price and stock on Findchips.com

01N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
01n60 Abstract: 01N60C3 SPS01N60C3 Contextual Info: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	sps01n60c3 pg-to251-3-11 01n60c3 01n60	PDF
01N60C3 Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A Contextual Info: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	spn01n60c3 ot-223 q67040-s4208 vps05163 +201n60c3 smd diode marking 03a	PDF
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	od-80 ot-223 ot-89 stk and str integrated circuits +9transistor smd zg 1e str-z4579 turuta 6 pin transistor smd code pa transistor 5d smd elm85361a stk and str integrated circuits, 2011 edition 5g smd transistor 15d diode smd code	PDF
TRANSISTOR SMD MARKING CODE 2A Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A Contextual Info: 01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	spn01n60c3 ot-223 q67040-s4208 vps05163 +401n60c3 transistor smd marking code 2a 01n60 smd diode marking 03a	PDF
01N60C3 Abstract: 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 Contextual Info: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 pg-to252 pg-to251 +5q67040-s4193 01n60c3 01n60 603 to252 q67040-s4188	PDF
01N60C3 Abstract: P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60 Contextual Info: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 p-to252 p-to251-3-1 +4q67040-s4193 01n60c3 q67040-s4188 01n60	PDF
Contextual Info: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 p-to252 p-to251-3-1 +2q67040-s4193 q67040-s4188	PDF
01n60c3 Abstract: PG-TO251-3-1 Contextual Info: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 pg-to252 pg-to251-3-1 +2q67040-s4188 01n60c3	PDF
Contextual Info: 01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	sps01n60c3 pg-to251-3-11 01n60c3 pg-to-251-3-11	PDF
01N60C Abstract: 01n60c3 SPS01N60C3 01N60 Contextual Info: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	sps01n60c3 pg-to251-3-11 01n60c3 pg-to-251-3-11 +201n60c 01n60	PDF
01N60 Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6 Contextual Info: 01N60C3 01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 p-to252 p-to251-3-1 +6q67040-s4193 01n60c3 01n60 603 marking to252 q67040-s4188 01n6	PDF
TO-251 footprint Abstract: 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60 Contextual Info: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 pg-to252 pg-to251 +8q67040-s4193 01n60c3 to-251 footprint 603 marking to252 infineon marking to-252 603 to252 q67040-s4188 01n60	PDF
Contextual Info: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu01n60c3 spd01n60c3 p-to252 p-to251-3-1 +2q67040-s4193 q67040-s4188	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF

Contextual Info: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	spn01n60c3 vps05163 ot-223 q67040-s4208 +101n60c3	PDF
01N60 Contextual Info: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	spn01n60c3 ot-223 vps05163 q67040-s4208 +201n60c3 01n60	PDF
Contextual Info: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	sps01n60c3 pg-to251-3-11 01n60c3 pg-to-251-3-11	PDF
720 TRANSISTOR smd sot-223 Abstract: 01N60C SPN01N60C3 01N60C3 VPS05163 01N60 Q67040-S4208 Contextual Info: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	spn01n60c3 ot-223 q67040-s4208 vps05163 +501n60c3 25ngerous 720 transistor smd sot-223 01n60c 01n60	PDF