01MAR2011 Search Results

PBT ASA-GF30

Abstract: ASA-GF30
Contextual Info: R E V I S IO N S PROJEKT NR.: EGATN02151 DATE B C C1 CARRIER REWORKED LEVER REWORKED 21MAR2005 TYEO ELEETRONIES SYMBOL CHNAGED PEN E - 1 0 - 0 0 3 8 3 3 22FEB2010 CHAMFER DELETED SEE PCN E- 1 1 - 0 0 3 9 4 2 01MAR2011 11MAY2005 DWN FE FE NR NR APVD m LTR 1-1

ITO-220

Abstract: SBR30150R
Contextual Info: SBR30150RF Voltage 150 V 30 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES      Low forward voltage drop High current capability High reliability

Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power

STPSC2006

Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power

SSG4436N

Abstract: MosFET
Contextual Info: SSG4436N 22A, 30V, RDS ON 4.6m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to

4435SC

Abstract: Mos-Fet 4435SC mosfet 4435sc SSG4435 SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620
Contextual Info: SSG4435 -8A, -30V, RDS ON 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: VNS14NV04P-E "OMNIFET II" fully autoprotected Power MOSFET Features Type RDS on Ilim Vclamp VNS14NV04P-E 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin

VNS14NV04P

Contextual Info: VNS14NV04P-E "OMNIFET II" fully autoprotected Power MOSFET Features Type RDS on Ilim Vclamp VNS14NV04P-E 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin

STM8L151* reference timer

Abstract: STM8L151G STM8L151 stm8l151k6 STM8L15xC6 STM8L152C6 stm8l151c6 STM8L151x4 STM8L151C4 STM8L151K4
Contextual Info: STM8L152x4/6 and STM8L151x4/6 Errata sheet STM8L152x4/6 and STM8L151x4/6 device limitations Silicon identification This errata sheet applies to revisions B and Z of the STMicroelectronics STM8L152x4/6 and STM8L151x4/6 devices. The full list of part numbers is shown in Table 2. The products are identifiable as shown in

TYCO PBT-GF20

Abstract: PBT-0F20 PBT-G Tyco 108-18957 AMP PBT-GF20 tyco mcp PBT-GF20 1-11P PBT-GF-20 251U
Contextual Info: H I ' Or M M t p t p ‘" i r m MO n IIM P IIR I I ÇHFP un» rui ii nii h hi h - /m BY COPYR IGHT2004 R ELEA S ED hnunuTYCO FREI ELEC TR O N IC S CORPORATION FOR P U B L I C A T I ON PUER V E R O E F F E N T L I C H U N G A LL R IGHTS R E S E R V E D .

Contextual Info: VNS14NV04P-E "OMNIFET II" fully autoprotected Power MOSFET Features Type RDS on Ilim Vclamp VNS14NV04P-E 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin

RBT-GF20

Abstract: DIN 16901-140 E11003 P11R ASA-GF30
Contextual Info: HI' ^ ‘ »'I n r T P T P ‘ "I n il Tn U N . I h' lll 11 M P 1 1 R II N i l TÇHpp II H l h / H I - R ELEA S ED FREI HNIlNir C O P Y R I G H T 2004 FOR P U B LIC A TIO N PUER V E R O E F F E N T L I C H U N G A LL RIGHTS RESERVED . ALLE REEHTE VORBEHALTEN.