01JUN2012 Search Results

Contextual Info: 4 3 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 20 LOC REVISIONS DIST - ALL RIGHTS RESERVED. BY - 1 - P LTR C1 DESCRIPTION DATE REDESIGNED BY ECO-12-008349 DWN FC 01JUN2012 APVD GOJ D D 5,3 3,5 12,0 3,5 SECTION A-A 8,0 C C 5,3 2,3

164164-1

Abstract: 164164-2
Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C 3 1 20 LOC B ALL RIGHTS RESERVED. BY - COPYRIGHT 20 2 REVISIONS DIST E P LTR DESCRIPTION M DATE ECR-12-010700 DWN MJG 11/06/12 APVD DP 33 D D 1.6 PLATING ZONES ZONE 3 ZONE 2 ZONE 1 11.7MIN 1.5 A B 5.8

VND7030AJ

Contextual Info: VND7030AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Reverse battery with external components

Contextual Info: VND7030AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Reverse battery with external components

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 3 1 20 LOC BY - REVISIONS DIST B ALL RIGHTS RESERVED. E P LTR DESCRIPTION M1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 33.0 D D PIN BODY SEE TABLE 1.6 9 SPRING PLATING ZONES

Contextual Info: WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage 2 1. BASE 2. COLLECTOR 3. EMITTER 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage VCBO

sigma asc 333

Contextual Info: ST10F272B ST10F272E 16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 31.25ns instruction cycle time at 64MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

amp 4805 connectors

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION TE CONNECTIVITY 6 5 4 3 2 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR D1 1.300 .010 D DATE REV PER ECR-12-011257 DWN "AMP" PART NUMBER AND DATE CODE TO BE MARKED IN AREA SHOWN.

5203

Contextual Info: Model 5203 Revere Double-Ended Beam Load Cell FEATURES • Capacities: 1k to 75k lbs • Environmental protection: IP67 DIN 40.050 • Material: nickel-plated steel • Center-loaded design • Optional ❍❍ FM certified versions are available for use in

Contextual Info: BT05S thru BT10S SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 0.8 Ampere BTS FEATURES .071 1.8 .055(1.4) ●Rating to 1000V PRV ●Ideal for printed circuit board ●Lead tin plated copper MECHANICAL DATA

EF52

Contextual Info: ST10F272B ST10F272E 16-bit MCU with 256 Kbyte Flash memory and 12/20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 31.25ns instruction cycle time at 64MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit

ULN2003 SO16

Abstract: uln2004 pin diagram of UlN2004 ULN2003 PIN DIAGRAM configuration ULN2001 ULN 2006 uln2002 equivalents uln2004a ULN2004 PIN DIAGRAM uln2003 st
Contextual Info: ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet − production data Features • Seven Darlingtons per package ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads

ULN2003 ac

Abstract: ULN2003 ULN2003 features uln2004
Contextual Info: ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet − production data Features • Seven Darlingtons per package ■ Output current 500 mA per driver 600 mA peak ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads

Contextual Info: SSE90N04-03P 90A , 40V , RDS ON 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)