09JAN2014 Search Results

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 3 1 20 LOC BY - REVISIONS DIST B ALL RIGHTS RESERVED. E P LTR DESCRIPTION M1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 33.0 D D PIN BODY SEE TABLE 1.6 9 SPRING PLATING ZONES

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2011 2 3 1 2011 LOC - REVISIONS DIST B ALL RIGHTS RESERVED. - P LTR DESCRIPTION AD1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 31.5 D D PLATING ZONES 1.6 9 SPRING PIN BODY SEE TABLE

Contextual Info: VN5MB02-E Smart Power driver for motorbike blinker Datasheet - production data Description The VN5MB02-E is a Smart Power driver for motorbike blinker; it is connected between the battery positive terminal VCC pin and a mechanical switch to the right or left side. As soon

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Contextual Info: ESDALC5-1BM2, ESDALC5-1BT2 Single-line low capacitance Transil , transient surge voltage suppressor TVS for ESD protection Datasheet − production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as:

Contextual Info: STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max STD9N40M2 TAB 0.8 Ω 450 V ID 6A • Extremely low gate charge 1 3 • Lower RDS(on) x area vs previous generation

Contextual Info: ESDALC5-1BM2, ESDALC5-1BT2 Single-line low capacitance Transil , transient surge voltage suppressor TVS for ESD protection Datasheet − production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as:

Contextual Info: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V

Contextual Info: VNP35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description The VNP35N07-E is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.

MX25L6406EM2I-12G TR

Contextual Info: T2550-12T, T2550-12G 1200 V 25 A Snubberless Triac Datasheet − production data Description A2 Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either for inductive, capacitive or resistive load

Contextual Info: STEVAL-IKM001V1 dSPIN product evaluation kit based on the L6470H Data brief Description The STEVAL-IKM001V1 is a kit composed of 1 EVAL6470H evaluation board + 1 STEVALPCC009V2 communication board, and 2 samples each of ST’s L6470H and L6470PD devices. The EVAL6470H evaluation board is a fully

Contextual Info: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power

Contextual Info: STLUX385A Digital controller for lighting and power conversion applications with 6 programmable PWM generators, 96 MHz PLL, DALI Datasheet - production data TSSOP38 Features • 6 programmable PWM generators SMEDs (state machine event driven) – 10 ns event detection and reaction