01APR2003 Search Results

DS1220

Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

DS1225

Abstract: M48Z08 M48Z18
Contextual Info: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

bit 3102

Abstract: DS12887 M48T86 M4T28-BR12SH SOH28
Contextual Info: M48T86 5.0 V PC real-time clock Not For New Design Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

DS1225

Abstract: M48Z08 M48Z18
Contextual Info: M48Z08 M48Z18 5 V 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

Contextual Info: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

74247 pin configuration

Abstract: 74247
Contextual Info: Part Number 856111 73.5896 MHz SAW Filter Data Sheet Features • • • • • • • For CDMA basestation IF applications Usable bandwidth of 1.2 MHz Low loss High attenuation Single-ended operation Ceramic Surface Mount Package SMP Package Pin Configuration

Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T59

Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28
Contextual Info: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration

DS12887

Abstract: M48T86 M4T28-BR12SH SOH28
Contextual Info: M48T86 5.0 V PC real-time clock Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per month

Contextual Info: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

1TJS125FH2A212

Abstract: 1TJS125 m41t06 KDS DT-38
Contextual Info: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation

M48T59

Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28 EP-28-1
Contextual Info: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration

Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

M48T58

Abstract: M48T58Y SOH28
Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T58

Abstract: STMicroelectronics
Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M41T01

Abstract: M41T0 SMD crystal unit
Contextual Info: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation

x13003 TRANSISTOR

Abstract: x13003 transistor X13003 STX13003-AP X13003G transistor STX13003 STX13003G-AP STX13003 STX13003G JESD97
Contextual Info: STX13003 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs

M48T58

Abstract: M48T58Y SOH28
Contextual Info: M48T58 M48T58Y 5.0V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

A11-A21

Abstract: A0-A21 M29DW640D M29DW640DB 3A800
Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)