01581USA Search Results

EDI8F82045C

Abstract: EDI8F82045C100B6C EDI8F82045C70B6C EDI8F82045C85B6C
Contextual Info: EDI8F82045C 2Megx8 SRAM Module Features 2 Megabits x 8 Static RAM CMOS, Module 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F82045LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

9018

Abstract: AM29F016 EDI7F332MC
Contextual Info: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and

AM29LV008T

Abstract: SIMM 80 jedec
Contextual Info: EDI7F433IMV 4x1Megx32 PRELIMINARY 4X1Megx32 Flash Module The EDI7F433IMV is organized as four banks of 1 meg x 32. The module is based on AMDs AM29LV008T - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 100 and

128*64

Abstract: transistor GW 93 H GW 94 H
Contextual Info: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address

7470 TTL

Abstract: 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470
Contextual Info: EDI8F82046C 2 Megx8 SRAM Module Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Approved, Revolutionary Pinout • 36 Pin DIP, No. 178

Contextual Info: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and

Contextual Info: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

T 9722

Abstract: Diode T 9722 EDI8G322048C
Contextual Info: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

9016

Abstract: EDI7F34IMC EDI7F34IMC-BNC LH28F800SU CG35
Contextual Info: EDI7F34IMC 1Megx32 1Megx32 Flash Module The EDI7F34IMC and EDI7F2341MC are organized as one and two banks of 1 Meg x 32 respectively. The modules are based on Sharp's LH28F800SU - 1Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

7470 pin diagram

Abstract: EDI8F2432C15MZC EDI8F2432C 7470 TTL 32Kx24
Contextual Info: EDI8F2432C 32Kx24 SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features 32Kx24 bit CMOS Static Random Access Memory • Access Times 15, 20, and 25ns • Output Enable Function • Fully Static, No Clocks • TTL Compatible I/O High Density Packaging

7705ac

Abstract: 128KX32 EDI8F32128C jedec 64-pin simm 7705
Contextual Info: EDI8F32128C 128Kx32 SRAM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and12ns CMOS: 15, 20, 25, 35, 55, 70, 85 and 100ns • Individual Byte Selects • Fully Static, No Clocks

RASH

Abstract: EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC
Contextual Info: E D I7F33IM C W D I 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16

zd 501

Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
Contextual Info: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

Contextual Info: m D 2,4,8 Megabyte • Flash { ELECTRONIC d esig n s . n c I 512Kx32 Flash Module Features 2,4,8 megabyte CMOS Flash Module Family The EDI Flash Family is a five-volt-only in system Flash program­ Organization: mable and eraseable read only memory module. The modules are

mz70

Contextual Info: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory

Contextual Info: EDI816256CA-RP ^ E D l 256Kx16 Ruggedized Plastic Static Ram B £ C n O H C O B G K NC. 256Kx16 Static RAM CMOS, MonolitNc F e a tu re s The EDI816256CA is a ruggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the

TME 87

Abstract: 1ZD12 tme 126 30 oc9 002
Contextual Info: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

Contextual Info: WD\ EDI2A C272129V 2 Megabyte Sync/Sync Burs t Small Outline DIMM •ELEC TR O N IC DE5IS N 5, IN C ADVANCED 2x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchro­

Contextual Info: m EDI9F33256C a l256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

Contextual Info: M EDI8F32512C E D I S M x 3 2 SRAM Module ELECTOONC DOGNS. WC 512Kx32 Static RAM CMOS, High Speed Module F ea tu re s The EDI8F32512C is a high speed 16 megabit Static RAM module 512Kx32 bit CMOS Static organized as 512K words by 32 bits. This module is constructed

EDI88130LPS25M

Abstract: EDI88130CS-RP 18kX
Contextual Info: m EDI88130CS-RP a E C IR O N C « S IG N S N C . 128Kx8 Static RAM CMOS, Monolithic F e a tu re s The EDI88130CS is a ruggedized plastic 128Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the