012035 Search Results

Contextual Info: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028

Contextual Info: SIEMENS BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive devicé, observe handling precautions! Type Marking Q62702-A1103 1=A Package o Pin Configuration

A12C

Abstract: 8021
Contextual Info: Tech no lo g y 8021 AND 8021-1 PIN DIAGRAM N /C C - A12C A7C A6C A5C A4 Z A3C A2C A1C 1 2 3 4 5 6 7 8 9 A0 C 10 I/OOC 1 1 12 1/02C 13 VssC 14 I'OI c 28 27 26 25 24 23 22 21 20 19 18 17 16 15 FEATURES 11Vcc □ WE □ N /C 13A8 □ A9 3 A11 □ OE □ A10 □ CEI

Ericsson RBS Integration Manual

Abstract: AXE switch ERICSSON commands Ericsson RBS hardware manual RBS ericsson user manual RBS ericsson maintenance bnc connector ericsson sdh ERICSSON axd 301 Ericsson Installation guide rbs rbs ericsson element manager multiplexing demultiplexing e2
Contextual Info: < datacom training > Testing Guide LZT 101 2003 RA3 EricssonZ developing your team’s skills Ericsson Datacom Certification Program < datacom training > Ericsson Certification Program – Datacom . 3 Previous experience counts . 3

Contextual Info: SIEMENS Silicon Schottky Diode B A T 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 62 62 Q62702-A971 Pin Configuration

diode marking 63s SOT23

Contextual Info: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration

Contextual Info: B 3 RADI A L L N FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 350 W 250 W 150 W right

A12C

Abstract: 8021
Contextual Info: Tech no lo g y 8021 AND 8021-1 PIN DIAGRAM N /C C - A12C A7C A6C A5C A4 Z A3C A2C A1C 1 2 3 4 5 6 7 8 9 A0 C 10 I/OOC 1 1 12 1/02C 13 VssC 14 I'OI c 28 27 26 25 24 23 22 21 20 19 18 17 16 15 FEATURES 11Vcc □ WE □ N /C 13A8 □ A9 3 A11 □ OE □ A10 □ CEI

Contextual Info: W M SWITCHES 294 LEVER SWITCHES - DESIGN FEATURES Wmk P H O N E : 773 792-2700 LEVER SWITCHES DESIGN FEATURES High quality, field-proven SwitchcrafP lever switches are available in a wide selection of illuminated and non-illuminated versions, 2- and 3-position, locking and non-locking functions can be

Contextual Info: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 350 W 250 W 150 W FREQUENCY (GHz)

Contextual Info: M RAD I ALL N FAILSAFE TRANSFER Page SWITCH 112 OPTIONS: /SUPP.DIODES R F CHARACTERISTICS | FREQUENCY RANGE IMPEDANCE 0 - 3 GHz 50 Ohms FREQUENCY GHz ] V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 1 1.15 I ! - 2 I 1.20 1.25 0.20 dB 0.25 dB 0.15 dB I ) 2 - 3