0117405 Search Results

Contextual Info: 0117405 0117405M 0117405B 0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)

0117405

Contextual Info: 0117405 0117405M 0117405B 0117405P 4M x 4 11/11 EDO D RAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

0118160B

Abstract: 0116165B 014400B 0117805 014400
Contextual Info: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343

0117405bj

Abstract: 0117405B
Contextual Info: 0117405 0117405M 0117405B 0117405P 4M x 4 11/11 EDO DRAM Features Low Power Dissipation - Active max - 75 mA / 60 mA - Standby: TTL Inputs (max) - 1.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.1 mA (LP version) - Self Refresh (LP version only)

Contextual Info: 0117405 0117405M 0117405B 0117405P 4M x 4 11/11 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)