00Q45L Search Results

PP-T20

Abstract: HY5117400B bel power QBS
Contextual Info: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

ECG10

Abstract: 7A SF ECG1029 ECG1038 R945 TE65C
Contextual Info: PHILIPS E C G INC 17E • btSBTSÛ 0GDM5b7 1 ECG1029, ECG1038 3.5 W O TL A u d io P ow er Am plifier Sem iconductors ECG1038 ECG1029 -I.I8|“ 3 0 -.9 4 5 "(2 4 (- r & M ÎU L £05 o 6 ,29S“(T.S) MIN. -.630“(I6)h ■I I , .I66“(4.2)MAX. — I0 1 — 7

Contextual Info: A p p l ic a t io n N o t e AVAILABLE AN56 J X20C17 16K ü c n r 2K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • 24-Pin Standard SRAM DIP Pinout * Fast Access Time: 35ns, 45ns, 55ns * High Reliability — Endurance: 1,000,000 Nonvolatile Store