00Q30 Search Results

adam tech 004

Contextual Info: UNITED TECH P1ELEC CENTE 5flE D • ^343^47 000302b S3? ■ UTI1 Military S tandard P roducts UT71563V Radiation-Hardened 32K x 8 SRAM 3.3-Volt A dvanced D ata S h eet UNITED TECHNOLOGIES MICROELECTRONICS CENTER O ctober 1992 FEATURES INTRODUCTION □ 70ns maximum address access time, LET threshold

P09N03

Abstract: dd3saa JDS oc-192 modulator
Contextual Info: preliminary D ata S heet PMC-2000164 PM | \ | PMC-Sierra, Inc. PM9311/2/3/5 ETT1 CHIP SET ISSUE 2 ENHANCED TT1 ™ SWITCH FABRIC PM9311/2/3/5 Enhanced TT1 Chip Set Enhanced TT1 Switch Fabric Datasheet

A2142

Abstract: 2sk mosfet
Contextual Info: 2SK1096-M SIPMOS FUJI POWER MOS-FET F-III SERIES N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers

100VJ

Abstract: EL2223CN
Contextual Info: EL2223C é la n te EL2223C Dual, 500 MHz High Speed, Operational Amplifier c high Features • W ide gain bandw idth— 500 M H z • H igh slew rate— 350 V/jms • H igh pow er bandw idth ± 10 Vout 5.5 M H z • Large open loop gain 83 dB • Low pow er— 5 m A /am pIifier

Contextual Info: L A T T IC E s e m ic o n d u c t o r LifiE D 530^4^ lattice Q 0030D Ö OT7 G A L 1 6 V 8 /8 8 3 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay

Contextual Info: IME D 'i n t e g r a t e d d e v i c e 4Ô2S771 G0Q3Ô17 4 • ~ rfisSSSX ' ' ’ " integratedDeviceTechndogyInc. ■ •" V- ’ - 1 K x 18-BIT CMOS BiFlFO ~ ' FEATURES: • Bi-directional Flrst-In/Flrst Out FIFO memory • Back-to-back 1 K x 18-bit F IF O organization

NA66

Contextual Info: bq2011 BENCHMARQ Gas Gauge IC Features General Description ► Conservative and repeatable measurement of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to main­ tain an accurate record of a battery’s

Contextual Info: 2SK1385-01 SIPMOS FU JI POWER MOS-FET N-CHANNEL SIUCON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs = ±30V Guarantee

OPB615

Abstract: OPB616 OPB617 OPB618 Inverter soldering
Contextual Info: ¡@.OETEK Product Bulletin OPB615 June 1996 Photologic Slotted Optical Switch Types OPB615, OPB616, OPB617, OPB618 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • • • • • • Storage Tem perature R a n g e . -40° C to +100° C