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Contextual Info: 1204 Series □upun I.D.C. Socket 1.27mmX1.27mm 0.05"x0.05" Material: Housing: 15% Glass filled PBT UL94V-0. Contacts: Phosphor Bronze. Plating: Selective gold plated: gold plated on mating area and nickel plated on wire cutting area. Cable: 0.635mm(0.02")pitch flat cable.

IHPC

Abstract: TCA 720
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7374210BNS/SG is a 4M x 36 bits Dynamic RAM MODULE w hich is assem bled 9 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7374210BNS/SG is

Contextual Info: KMM372F803AK/AS KMM372F883AK/AS DRAM MODULE KMM372F803AK/AS & KMM372F883AK/AS Fast Page with EDO Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 3 7 2 F 8 0 8 3 A is a 8 M b it x 7 2

RTL8186

Abstract: RTL818 OA41 DWt5
Contextual Info: ! ! ! " ! " # ! $! " " ! % ! ! & ' & " ' " ' ! * + ,. -&.&/ -& & !"## $ 0% ( 1 2 34+( 5 &6& &1&7&08 4 + , , ,9 , -& & . -&9&: .&9 &9; .&/&. 9,! 0%4 + 0 % 34+( &" ! ' %&' & '( ) !! *)+') ! - ) '!. / , %) '!! + )* '* ! ' + , )* !0! '+ .%)1 *2 73+ '7 <22

Contextual Info: TOSHIBA TMP96C141AF CMOS 16-bit MICROCONTROLLERS TMP96C141AF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96C141AF is high-speed advanced 16-bit m icrocontrollers developed for controlling medium to large-scale equipm ent. TMP96C141AF is housed in an 80-pin flat package.

TC524256BZ

Contextual Info: PRELIMINARY 262, 1 4 4 W O R D S x 4 BIT S M U L T IP O R T D R A M D E SC R IP T IO N The TC524256BJ/BZ is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The

Contextual Info: S C A N 92 8 02 8 SCAN928028 8 Channel 10:1 Serializer with IEEE 1149.1 and At-Speed BIST Texa s In s t r u m e n t s Literature Number: SNLS163E Semiconductor SCAN928028 8 Channel 10:1 Serializer with IEEE 1149.1 and At-Speed BIST General Description Features

AM29LV400B-120EC

Abstract: 2q514
Contextual Info: î>W R L I M i N A R v AMD il Am29LV400 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

MVAX-XXX-XXXX-13X

Abstract: 4318J 112X16 X13B
Contextual Info: REV. |AC TABLE 1 B O D Y S PE CI FI CAT IO N SEE SHEET 4 THRU 7 FOR FIG. ( * : CUT TO "A” DIM IN BODY DETAIL) P A R T NU MB ER M H A X -X X X -X X X X - 0 8 MHAX—XXX—XXXX—09 MHAX—XXX—XXXX—10 M HAX-XXX-XXXX-11X MHA X-X XX- XXX X- 12X MHA X-X XX- XXX X- 13X

AND8178

Abstract: SKT3 68HC11 8XC51 AD780 AD7890 AD7893 ADSP-2101 AN-381 TMS320C25
Contextual Info: ANALOG ► DEVICES AN-381 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Obtaining the Best Performance from the AD7893,12-Bit Serial A/D Converter by Albert O'Grady and Mike Byrne INTRODUCTION

Contextual Info: KMM372V803AK/AS KMM372V883AK/AS DRAM MODULE KMM372V803AK/AS & KMM372V883AK/AS Fast Page Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: ADVANCE INFORMATION * Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Embedded Program Algorithms

29LV800

Abstract: psop 08
Contextual Info: Advance information Features •Organization: 1M x 8 / 5 12 K x 1 6 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture— T top or B (bottom)

MECL 10000

Abstract: MCM6830A transistor bf 175 MCM6605AL1 c3460 equivalent MCM6810A mcm6616
Contextual Info: GENERAL INFORMATION 1 RANDOM ACCESS MEMORIES RAM 2 READ ONLY MEMORIES (ROM) 3 M6800 SYSTEM MEMORIES APPLICATION NOTES 5 RELIABILITY INFORMATION 6 MEMORY INTERFACE i Volume 7 / Series A prepared by Technical Information Center Semiconductor Data Library MOS MEMORIES