00G37 Search Results

Contextual Info: 14E D INTEGRATED DEVICE • 4Û2S771 00G3747 =1 CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT IDT 72131 IDT 72141 FEATURES: DESCRIPTION: • 35ns parallel port access time • 5 0M H z serial port shift rate Th e ID T72131/72141 are high-speed, low power paraliei-toserlal FIFOs. These FIFOs are Ideally suited to serial com munica­

TB531

Abstract: ecg1090 ECG1028
Contextual Info: PHILIPS E C G INC 17E O • tb531Efl 00G37fl7 T ■ T-74-Ö 5-01 ECG1028,ECG1090 POWER AMPLIFIER MODULE sem iconductors 78 70 64 FOR 25 WATTS M IN . AF POWER AMPLIFIER 2 POWER SUPPLY A 1 ECG I0 2 8 E C 6 10 9 0 _. « N 2-3.2# S 4*-0. 1 ^ 36^ d im e n sio n s

NJM2068

Abstract: NJM206BM NJM2068 equivalent f 4558 RS 4558 NJM2068V 4558 NJM2068D power amp 4558 NJM2068L
Contextual Info: LOW -HOISE DUAL OPERATIONAL AMPLIFIER NJM2068 T he NJM2068 is a high perform ance, Low noise dual operational am plifier. This am plifier features popular pin-out, superior noise perform ance, and superior total harm onic distortion. This amplifier also features guaranteed noise perfor­

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

mo331

Abstract: wy ERL 35
Contextual Info: E599B H V L S I TECHNOLOGY INC 72 De J T B flfiBM? 0000377 5 | EPL“ FAMILY ERASABLE PROGRAMMABLE LOGIC FAMILY FEATURES DESCRIPTION • CMOS replacement for industry standard 20-pin programmable logic devices : VTI’s Erasable Programmable Logic EPL family replaces industry stan­

61070-1

Abstract: OX-6-106-01
Contextual Info: .100" 2.54 mm Header (Preferred Version in Europe and Asia) 1100-6 Straight Locking Locking polarizing with preinserted .025” square pins. Ideal when interconnections must be locked together. Mates with 1300 Series crimp or IDC style connectors. Housing Material: Nylon 94V-0

Contextual Info: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

NJM2082D

Abstract: NJM2082M NJM2082 NJM082 NJM2082L
Contextual Info: DUAL J -FE T INPUT OPERATIONAL AMPLIFIER NJM2082 T he NJM2082 is JF E T input dual operational amplifiers. T he NJM2082 features low input offset and bias current, high input im pedance. T he NJM2082 ideally suits for fast integrator, D A converter, sam ple & hold and audio applications. The

DS1210

Abstract: DS1210S ICC01 os1210
Contextual Info: DA LL AS S E M I C O N D U C T O R CÔRP BTE D 21=14130 D 0 0 3 7 5 S 4 B DAL DS1210 ^ P 4 tó > - 3 7 DALLAS DS1210 Nonvolatile Controller Chip SEMICONDUCTOR • U Æ M FEATURES • PIN DESCRIPTION vooo[ Converts CMOS RAMs into nonvolatile memories • Unconditionally write protects when Vcc is out

s11 diode shottky

Abstract: DS1237
Contextual Info: DALLAS SEMICONDUCTOR CORP 3TE D B 2bl413D GQD37b2 T • DAL DS1237 »fi wfÄpliw V-: /ft DALLAS SEMICONDUCTOR ■'inÜÜiii m\ ‘y y~ '■r'- PRELIMINARY DS1237 DRAM Nonvolatizer Chip 1' 1 PIN C O N N E C T IO N S FEATURES . • Converts DRAM into nonvolatile RAM

LX8385-00CP

Abstract: circuit diagram for automatic voltage regulator LX8385-00CDDT adjustable regulator high voltage LX8385-00IP automatic voltage regulator circuit diagram databook sanyo voltage regulator 3A output 6MV1500GX LX8385
Contextual Info: U N Doc #; 8385 LX8385 3A The I n f i n i t e P o w e r o f I n n o v a t i o n Low P D r o p o u t Pos itiv e A d justab le R e g u l a t o r D r o d u c t i o n D E S C R IP T IO N The LX8385 is a positive adjustable regula­ tor designed to provide 3A output current.

NJM2112

Abstract: r gb 489 HJM2112D KJM2112V NJM2115
Contextual Info: QUAD OPERATIONAL AMPLIFIER NJM2112 The N JM 2112 is low supply Voltage ±1.0V min. and Low saturation output voltage (+2.0V p-p supply at supply voltage ± 25V) operational amplifier. It is applicable to H A N D Y T Y P E C D , R A D IO CA SSETE C D , and PORTA BLE DAT, that are

Contextual Info: 14E D INTEGRATED DEVICE • MÔS5771 00037bl 3 m CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 BIT & 4096 x 9 BIT IDT 72132 IDT 72142 FEATURES: DESCRIPTION: • 35ns parallel port access time ’ The IDT72132/72142 are high-speed, low-power serlal-toparallel FIFOs. These FIFOs are Ideally suited to serial communi­

Contextual Info: EL7242C/EL7252C Features General Description • • • • • • • • • The EL7242C/EL7252C dual input, 2-channel drivers achieve the same excellent switching performance of the EL7212 family while providing added flexibility. The 2-input logic and configu­

NTE74LS244

Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G

DD660

Contextual Info: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules

2809b

Contextual Info: 1N 2804 thru 1N 2846B and 1N 45 57 B thru 1N 4564B SCOTTSDALE, A Z SANTA ANA, CA F o r m ore info rm atio n cali: 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

Contextual Info: HY62V256B Series -H Y U N D A I 32K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256B has a data retention mode that guarantees

2N5377

Contextual Info: AL LE GR O M I C R O S Y S T E M S INC T3D D • 0 5 0 4 33 6 0 0 0 3 7 2 7 S ■ ALCR PROCESS TNL Process TNL NPN Small-Signal Transistor Process TNL transistors and chips are double­ diffused NPN silicon epitaxial planar devices in­ tended for use in general-purpose amplifiers and

LX8584

Abstract: LX1431 LX8584A P54C
Contextual Info: LIN Doc #: 8584 LX8584/8584A/8584B M T h e I I n f i n i t e K <; I I P o w e I r 7A Low I n n o v a t i o n o f D r o p o u t P o s it iv e A d ju s t a b l e R e g u la t o r P r e l i m i n a r y DESCRIPTION The LX8584/84A/84B are low dropout three terminal adjustable regulators with

DDH 3E

Contextual Info: EPSON PF617-04 SEDI 765 LCD Driver • • • • Corresponding to Large Capacity MIM LCD Panel PWM Method Gradation Display Wide Range of LCD Driving Voltage 160-output Driver • DESCRIPTION The SED1765 is an LCD driver for driving the segment side, gradations by the PWM Pulse Width Modulation

STM-1 Physical interface PHY

Abstract: TCA240 341fh rca 645 PM4341A PM6341 PM7344 PM7345 PUB54016 E1 HDB3
Contextual Info: PMC-Sierra, Inc. • " ISSUE 5 PM7344 S/UNI-MPH SATURN QUAD T1/E1 MULTI-PHY USER NETWORK INTERFACE FEA TU RES • Single chip quad ATM User Network Interface operating at 1.544 Mbit/s or 2.048 Mbit/s. • Implements the ATM Forum User Network Interface Specification V3.1 for DS1

Contextual Info: POWER 9100 GRAPHICS CONTROLLER August 22, 1994 Chapter 1. Technical Overview Single-Chip 2-D Graphics Accelerator Powerful Graphics Features O Ultra-high-speed local-bus display controller uses w orkstation display technology to give m aximum acceleration w ith graphical user interfaces such as

LT010MC

Abstract: LT010 DGG37 DGG371S
Contextual Info: SHARP ELEK/ HELEC DIV 17E D • aiöQT'ia DGG371S S ■ LT010MC/MD/MF :x m Features • Wavelength: 810nm • Single transverse mode Applications • Measurement instruments • Short-distance communications • Information Processing equipment Absolute Maximum Ratings