00G13 Search Results

FF 150 R 1200 kf igbt

Abstract: IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12
Contextual Info: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules

T-290 eupec

Abstract: el 509 T188F T510S 3403SC17 00G132
Contextual Info: Type V drm It r m s m Its m 3 4 0 3 S C17 00G132Ö blE D EUPEC Fast thyristors BMT M U P E C / i 2d t Itavm ^ c V TO rT ( d i/d t) cr ( d v /d t)cr V gt Iqt RfhJC DIN IEC 747-6 tyj = 25 °C tVj = 25 °C 180 ”el sinus V mA °C/W °c = 50 2 = 500 = 500 =1000

BB105

Abstract: MV109 diode bb105 BB105 siemens ct3v CKV2105 Direct Replacement MOTOROLA DKV4100 DKV4105 DKV4109
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV4100 Series ALPHA I N » / SEMICONDUCTOR 4ÖE D • 0SÔ5M43 00G13Eb 331 I ALP Features Direct Replacement for Motorola, Siemens, and ITT BB105 and MV109 Types Highest Q Possible Reproducible C vs. V Characteristics Available in All Standard Packages

74FCT544

Abstract: QS74FCT652 74FCT273 p74fct648 QS74FCT521 CD74FCT541* harris IDT CROSS CD74FCT828 P74FCT623 P74FCT241
Contextual Info: PERFORMANCE SEMICONDUCTOR 5DE D • 7G b25I17 00G13A1 b'l'l W M P S Q FCT-T CMOS Logic Cross Reference Guide HARRIS AMD NSC QSI CD74FCT2952AT CD74FCT2953AT CD74FCT29520AT CD74FCT29521AT r " / î ‘° a IDT QS29FCT52AT/BT/CT QS29FCT53AT/BT/CT QS29FCT520AT/BT/CT

VHE701

Abstract: VHE702 VHE703 VHE704 INC30
Contextual Info: mCROSEn i CORP/ MICRO SbE » • b l l ^ ü ? 00G13S3 37S ■flflL MICR0 QUALITY / ’T - t > 3 r \ c\ S E M IC O N D U C TO R , INC 30 Amp Epitaxial Center High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt VRRM Low Thermal Resistance Extremely Low Leakage at High Temperature

VSB54

Abstract: VSB52
Contextual Info: MICROSEMI CORP/ MICRO m bllSTD? 00G1377 00=1 • M 2L SbE D ~ T '-X 3 -ô S M IC R O Q U A L IT Y / DIB Schottky S E M IC O N D U C TO R . INC 750 mA Dual In-Line Bridge VSB Series 20V, 30V and 40V VRRM Ratings .65 Volts VF Per Diode at 750 mA Standard .10"-2,54MM Dip Lead Spacing

IGBT FF 300

Abstract: eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF
Contextual Info: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules

P3100B

Contextual Info: CERMETEK MIC RO ELECTRONICS Cenmetek m lo f o e la e t r a n i e B bflE D • 2005603 0001372 22^ M C E R CH1840 - Low Profile Data Access Arrangement DAA Direct Connect Telephone Line Interface Technology patent pending INTRODUCTION FEATURES The C H 1840 is an ultra small, low profile Data Access Arrange­

Contextual Info: AWT924S10 TX POW ER MMIC Advanced Product Information Rev. 1 G SM /DCS DUAL BAND GaAs POW ER AM PLIFIER IC DESCRIPTION The A W T924 is a monolithic G a A s Power Amplifier. It can be used in the following dual band handset applications: G SM 900/D C S1800.

Contextual Info: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e

Contextual Info: FDC37C665GT FDC37C666GT STANDARD MICROSYSTEMS CORPORATION, PRELIMINARY 80 Arkay Drive, Hauppauge, NY 11788 <516 435-6000 Fax 516) 231-6004 Advanced High-Performance Multi-Mode1 Parallel Port Super I/O Floppy Disk Controllers kTM FEATURES • • • • •

Contextual Info: SAM S UN G E L E C T R O N I C S INC TlbMlHE DGCHBbM b M S M Ö K 4EE D LM317 LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE ADJUSTABLE REGULATOR This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator designed to supply more than 1,5A of load current with

rza series

Abstract: Calex chemi-con rz series 48S5.5000NT Nichicon pr series 2500N1 A77 transformer
Contextual Info: 30 Watt NT Series Features • Only 2.02" x 1.62" x 0.55" high ■ -40° to +90°C case operating range standard ■ Very low OFF current, 1 mA typically ■ 1544 VDC input-output isolation per UL1459 ■ Transient overvoltage protected output ■ Overcurrent and overtemperature protection

Contextual Info: ÛUALITY SEMICO NDU CTOR INC bSE D QSFCT861 /2/3/4T, • 74bbñQ3 00D13BG HÛ7 * 0 S I 2861/2/3/4T Q S 54/74FC T861T Q S 54/74FC T862T Q S 54/74FC T863T Q S 54/74FC T864T High Speed CMOS Bus Interface 9 & 10-bit Transceivers Q Q S 54/74F C T2861T Q S54/74FC T2862T

L3840

Abstract: L5568 XL78C800 L1S24 L5760 L6240 ls376 L-1344 L6354 78c30
Contextual Info: R OHN CORP/ EXEL NELECS 3SE • 7ÖET014 0001353 'r'a b 1°1 07 M ICROELECTRONICS ExetUtnc» D fo E* S ■ REM XL78C800 Multi-Level E2PLDs PIN CO NFIGU RATIO N FEATURES ■ 600-800 Gate Equivalent Logic Com plexity 24 Pin Skinny DIP Type "P 3” Package ■

Viper L2A

Abstract: opti 82c596 82C558N 82C465MV opti 82C556
Contextual Info: 82C556/82C557/82C558N Viper Notebook Chipset Data Book Revision: 1.0 912-3000-032 May 25,199 5 Copyright Copyright 1995, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechani­

d2166

Abstract: marking _TH PM5712 stm stt 128 DDD115T PM5312 PM5343 PM5344 PSL4
Contextual Info: S TANDARD PRODUCT PMC P M C -S ie rra , Inc. ISSUES PM5344 SPTX SONET/SDH PATH TERMINATING TRANSCEIVER FEATURES • Monolithic SONET/SDH Path Terminating Transceiver that terminates the path overhead of one or three STS-1 AU3 paths or a single STS-3c (AU4) path.

ACRIAN

Abstract: acrian inc 8Z-2 AMPLIFIER 5W
Contextual Info: I AGRIAN INC DE I GläSnfl DGD13D1 7 È M t m m m _ I \ r n m W ! B5-8Z GENERAL DESCRIPTION The B5-8Z is specifically designed for 8 Volt operation in VHF power amplifier applications covering the range from 100 - 200 MHz. It uses single chip construction and

Contextual Info: ÛUALITY SEMICONDUCTOR INC bSE J> • 74bfc.ñG3 0G013Ô3 bbD « Ú S I QS3251 Advanced Information High-Speed CMOS QuickSwitch 8:1 Mux / Demux Ô FEATURES/BENEFITS • • • • 5 0 switches connect inputs to outputs Pin compatible to the 74F251, 74FCT251, and

MA4E917

Abstract: 00G132 MA4E913
Contextual Info: M/A-COn SEMICOND-.BRLNGTON 11 D • SbM2214 D0D1322 T H m e Ajfocam T - 07 -o y Ceramic Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ CAN BE SCREENED TO JANTXV LEVELS ■ UNIFORM RF CHARACTERISTICS Applications

Contextual Info: CHAPTER 1 1.1 O V E R V IE W 1.2 FEATURES Supports system-level navigation processing Supports DVD 1 .OVideo O bject VOB bit streams Decodes MPEG-2 and MPEG-1 video in real time Display: NTSC (720x480 @ 60 fps) and PAL (720x576 @ 50 fps) Decodes Dolby AC-3, LPCM , or

bq3285

Abstract: bq3286 DDG1377 DS1285 DT-26 MC146818A ODD1374
Contextual Info: bfiE D BENCHMARâ MICROELEC 137601=1 0001 3 7 3 4ÔQ « B E N bq3285 BENCHMARQ Real-Time Clock RTC Features >- D irect clock/calendar replacem ent for IBM AT-compatible com puters a n d o th er applications >- Functionally com patible w ith th e DS1285

Contextual Info: 4TE PREVIEW D • SflbûHSb G G Q 1 3 b 2 IH lll 144 ■ M M H S m ill NATRA DATA SHEET_ T=M o-3'5 M H S October 1990 M 67202 1kx0 CMOS PARALLEL FIFO MAIN FEATURES . FIRST IN FIRST OUT DUAL PORT RAM FAST ACCESS TIME : 25 TO 55 ns

2.2Kohm resistor

Abstract: P101
Contextual Info: P101 High Bandwidth PSDC Semiconductor Featnrgs^.,^_ — . Stabilizes Power Supply Feedback Loop . Reduces Power Supply Signal Gain J . Effective For Signals: 1 MHz to 1 GHz . Low Energy Storageflmportant For Safety Applications . Restores Output Signal Wave Forms Of High Speed Digital