00ESS Search Results

Contextual Info: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency

Contextual Info: GEC PL ESSEY S E M I C O N D U C T O R S MSC60028 POWER FACTOR CONTROLLER The MSC60028 Power Factor Controller allows the construction of a high performance, low-cost off-line regulator with the following advantages: i Corrects the power factor to near unity across a wide range

FIT4

Abstract: M 3329 B1 satellite communication working sta450a IEC958 display 16x2 sdars UCODE TQFP80 ISO-8859-1
Contextual Info: STA450A XMRADIO SDARS SERVICE LAYER & SOURCE DECODER FUNCTIONS • XMRADIO SERVICE LAYER DEMULTIPLEXING ■ CHANNEL AUXILIARY DATA MANAGEMENT ■ CONDITIONAL ACCESS CONTROL SERVICE COMPONENTS EXTRACTION SERVICE COMPONENTS DECRYPTION HIGH QUALITY AUDIO DECODING WITH

sta4001

Contextual Info: STA450A XMRADIO SDARS SERVICE LAYER & SOURCE DECODER FUNCTIONS • XMRADIO SERVICE LAYER DEMULTIPLEXING ■ CHANNEL AUXILIARY DATA MANAGEMENT ■ CONDITIONAL ACCESS CONTROL SERVICE COMPONENTS EXTRACTION SERVICE COMPONENTS DECRYPTION HIGH QUALITY AUDIO DECODING WITH

sta450a

Abstract: IEC958 TQFP80
Contextual Info: STA450A XMRADIO SDARS SERVICE LAYER & SOURCE DECODER FUNCTIONS • XMRADIO SERVICE LAYER DEMULTIPLEXING ■ CHANNEL AUXILIARY DATA MANAGEMENT ■ CONDITIONAL ACCESS CONTROL SERVICE COMPONENTS EXTRACTION SERVICE COMPONENTS DECRYPTION HIGH QUALITY AUDIO DECODING WITH

MB86605

Contextual Info: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 16-Bit Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface -RD -CSO -CS1 A4 to AO -BHE MODE1 MODEO t 0 I I I I fl I I I MPU Interface -MSG • -C /D -I/O -ATN ■ Internal Processor Various Registers Timer 32 bytes

100MS

Abstract: BR210-100 pjiy M3076
Contextual Info: 25E D • ^53=133. 0G22243 4 ■ BR210 SERIES N AUER PHILIPS/DISCRETE T - 2 S - 0 ^ BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz

866b

Abstract: 8749C 81090
Contextual Info: Data Sheet October 1994 A A T C T Microelectronics CC025 Triple Output-Series Power Modules: 18 Vdc to 36 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range