00D2 Search Results

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

Contextual Info: MERRIMAC INDUSTRIES INC 4bE B • b00Mb3^ 00D2SSb 2 ■ M M I I r - 7 V W j - o / hâ Merrimac ads-4iv-iooo 15 dB DIGITAL ATTENUATOR 4 Bit Direct TTL Logic Control V TTL CONTROL NPUT • • • • • V QND Typical Performance Data CO ■O l/l in o 2 O <

B1762

Contextual Info: SOLID STATE DE V IC E S INC 12E D | f i 3 b t . 0 1 1 00D20A5 S | Preliminary Data Sheet T~"33>— O7 SFT6200 10 AMP RADIATION TOLLERANT NPN TRANSISTOR 150 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 T W X 910-583-4807

photoreflector

Abstract: 4H51 glass lens phototransistor P2826 hamamatsu photoreflector photoreflector hamamatsu
Contextual Info: HAMAMATSU CORP IIE D HSETbCH HAMAMATSU 5 • PHOTOREFLECTOR P2826 TECHNICAL DATA C 00D27G1 ~ T - V /- 7 3 Phototransistor output, Long focal distance 3mm , Thin package (4.0 x 4.2 x 1.7mm) The P2826 m iniature photoreflector uses a high pow er infrared LED and a highly sensitive phototransistor in a sm all epoxy resin

"Op Amp" lm 324

Abstract: M2242 EL2242CJ EL2242CM EL2242CN EL2242J ELANTEC sz EL2242
Contextual Info: EL2242/EL2242C 5ÖE D p la n te r W Ê Ê U w U m Ê Ê Ê .W k lw Ê 0 m m • 312TSS7 00D22Ô7 47D « E L A EL2242/E L 2242C D u a l F a s t S i n g l e - S u p p l y U n ity - G a in S t a b l e O p A m p HIGH PERFORWANCEANALOG INTEGRATED ORCUfTS ü ELANTEC INC

1 amp FET switch

Abstract: KSS oscillator LB1132AC Scans-00392 high-voltage bipolar transistor
Contextual Info: A T & T MELEC I C ESE D • G0S0D2b 00D27bl 1 ■ SWITCHED-MODE PULSE-WIDTH MODULATOR LB1132AC T\53-//~3) Description The LB1132AC Switched-Mode Pulse-Width Modulator (PWM) features a single-ended output which can either sink or source currents up to 200 mA. Consisting of eight functional blocks, the device is suitable for performing the basic

HALL 95A

Abstract: 95a hall 2030P SLD20 SLP20-P SLP2040P 2045-P
Contextual Info: "a? GENL INSTR/ POWER DE~| 3*^0137 00D2233 S T-2 3 - 0 7 *‘ ^ f ‘" ‘ ' “ ^ ÿ s C H O T T K y R E C T IF IE R " % £ ‘ GENERAL INSTRUMENT VOLTAG E RANGE 20 to 45 Volts CURREN T 20 A m peres TO -3P FEATURES • D ual rectifier construction , positive center-tap

A05F

Abstract: AR05F AS05F semtech AS4
Contextual Info: SEliTECH CORP 34E ]> • fllBllBT 00D23D3 2Sb « S E T CENTER TAPS AND DOUBLERS ^ ABSOLUTE MAXIMUM RATINGS @25°C UNLESS OTHERWISE SPECIFIED Device Type Average Forward Current (5) Reverse Voltage VnwM Vrrm Volts I Volts (1) (2) If (AV) 0 Tc If (AV) 0 T*

sfnf222

Contextual Info: r 8368602 SOL ITRON D EV IC ES 70 DeJ fl3t,ab02 00D2041 4 r IN C 70C 02041 T-39-09 SWITCH MOS SFNF222 POWER M O S PACKAGE TO-39 MAXIMUM RATINGS •VDS *D IDM VGS V lL TJ oper T „ stg UNITS PARAMETER SYMBOL Voltage, Drain Co Source Drain Current, Continuous @ T *25°C

ND16AT

Abstract: NP16AT NP16BT NP16DT NP16MT np16g
Contextual Info: GENL ÏNSTR/ POWER ~fi7 DE I 30^0137 00D2 47 7 0 y - ¿ 3 - o r NP16 ATTHRUNP16 M T :;í?16ÍfiM P ER E -í'SIL' C O N ¡R E eT |FtER - .N s í f S » VOLTAGE RANQE 50 to 1000 Volts CURRENT 16.0 Amperes TO-220 38 (9 65 .139 (353) .101 (4 09) r _14_(3_56J

Contextual Info: 7*432731 00D2410 Oh? AND 7tUltra Bright LED Lamps: Type 1 Weight: 0.12 g Unit: mm AND160NG 03.8 + 0.2 GaP Green Light Emission T-1 Package (3 mm) 03.1 ±0 .2 Features • • • • • • 0.7 Max 0.45 Striking Bright Peak wavelength (Xp = 567 nm) high bright emission

6189

Contextual Info: SOLI» STATE DEVICES INC 1EE D fl3bb011 00D21SÖ S | r-33-a| 2N6188 AND 2N6189 10 AMP HIGH SPEED PNP TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE j " K • ■ SSPII 14830 Valley View Avenue La Mirada. California 90638

Contextual Info: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum

LC100A

Contextual Info: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

Contextual Info: ^SANYO SE M IC ON DU CT OR CORP 7b I>E | 7 cH 7 0 7 b 00D2ESh 4 I f T-41-33 ^ i ^¡fi]46~15mmH 4—5ŸÎt^ p "J 46— 15mmH 4~5Digits L E D Numeric Displays for Clock Ta= 25C' m. « £ fêisia Type No. Com. -Anode Com. -Cathode Color lF/seg Drawing Gre­ mA

Contextual Info: SONY CORP/COMPONENT HIE PRODS D A3ÔB3fi3 00D2Û77 0 ISONY 1T33C SO NY. Silicon Variable Capacitance Diode Description Unit: mm Package Outline The 1T33C is designed for CATV tuner, these diodes easily cope with the trend for miniaturi­ zation. They combine low serial resist with large

N170PH12

Abstract: gate firing of d.c drive TN170P
Contextual Info: WESTCODE SEMICOND UCT ORS 3TE D • <170^55 00D2173 7 ■ W E S B r - z r - 1? Technical Publication WESTCODE 0 SEMICONDUCTORS TN170P Issue 2 October 1985 Convertor Grade Stud-Base Thyristor Type N170P 196 amperes average: up to 1500 volts V r r m Ratings Maxim um values at 125°C Tj unless stated otherwise

CXC515

Abstract: SW42CXC515
Contextual Info: WESTCODE SEMICONDUCTORS 3TE D • 4 ■ lilESB T - O i- ¿ 3 RVG'HSS 00D2 S2 1 Technical Publication WESTCODE SEMICONDUCTORS DC515 ISSUE 2 May, 1989 Ceramic Capsule Silicon Diodes Type CXC515 1100 a m p e re s average: up to 4400 vo lts V rrm RATINGS Maximum values at 160°C, Tj, unless stated otherwise

Contextual Info: ITWO CHIPS TYPE LED ▼ROUND TWO CHIPS TYPE LED ▼PACKAGE DIMENSIONS Ta=25 C Unit : mm Mt7ûlSÔ 00D23ÖS ^23 51

ifr 150 mosfet

Abstract: ifr mosfet 20 ampere MOSFET PC117 ifr 531 J843 JS43
Contextual Info: 7294621 POWE REX INC m/VEREX ^ ] 1FJ 7 2 T 4 b 21 00D2747 ñ _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412) 925-7272 ^_ • J843 Tentative Single EXMOS MOSFET 10 Amperes/60 Volts , Description Powerex Single EXMOS™ MOSFET

Solitron Transistor

Contextual Info: .8 3 6 8 6 0 2 SOL IT R O N D E V I C E S INC 95D SOLITRON DEVICES INC ^5 0 2853 D ~ r ~ •?-/ 5^ DE |fl3bflbD5 00D2flS3 0 » » © i r ©ättäiksx n \< Dev/'ces, Inc. MEDIUM TO HIGH VOLTAGE, FAST SW ITCHING N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Asus MONITOR MOTHERBOARD CIRCUIT MANUAL

Abstract: T2D 83 diode gp026 st GP025 82430TX 82371EB Asus PC MOTHERBOARD CIRCUIT schematic diode T75A Asus PC MOTHERBOARD CIRCUIT MANUAL 8272A floppy disk controller block diagram
Contextual Info: PRELIMINARY DRAFT Intel Extended Temperature 82371EB PCI-TO-ISA/IDE Xcelerator PIIX4E Datasheet  Integrated 16 x 32-bit Buffer for IDE PCI Burst Transfers  Supports Glue-less “Swap-Bay” Option with Full Electrical Isolation Supported Kits for both Pentium and

MC68HC705P6A

Abstract: MC68HC705P6ACDW MC68HC705P6ACP interface 68HC05 68HC705P6A HC05 M68HC05 MC68HC05 MC68HC05P6 pinout of motorola 68hc05
Contextual Info: General Release Specification A G R E E M E N T 68HC705P6A R E Q U I R E D HC705P6AGRS/D Rev. 1.0 CSIC System Design Group Austin, Texas N O N - D I S C L O S U R E July 23, 1996 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E