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    1300 laser diode rise time

    Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
    Contextual Info: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed


    OCR Scan     		502cqfot-1841300 laser diode rise timeindium gallium arsenide phosphide lasers+7indium gallium arsenide phosphideoc45klaser 477semiconductor laser internationaldata by 476 diode1300 nm laser 40 mwdiode 476 k PDF

    Contextual Info: AT24C01A/02/04/08/16 Features • Low Voltage and Standard Voltage Operation 5.0 Vcc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2.5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 X 8 (8K) or 2048 X 8 (16K)


    OCR Scan     		at24c01a/02/04/08/1616-byte14-pinat24c16n-10sc-1+4at24c16-10sc-1at24c16-10pi-1at24c16n-10si-1at24c16-10si-1 PDF