00BFL4 Search Results

Contextual Info: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which

m2716a

Contextual Info: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED

0257S2

Contextual Info: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith

Contextual Info: SIEMENS KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm

Contextual Info: SIEMENS Position Hall Sensor KSY 10 Features • • • • • High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance • Plastic-encapsulated miniature package Typical applications

m27c2568

Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
Contextual Info: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A

LM6141

Abstract: 10v regulator 7910 lm814 Ior 4020 transistor 29 amp LM6141wm LM124 LM185 LM614 LM614CN
Contextual Info: LM614A/LM614 NATL SEHICON» LINEAR 22E T> bS01154 □ □bfl'OQ b National Semiconductor 7“- 7 9 - / 0 LM614A/LM614 Quad Operational Amplifiers and Adjustable Reference General Description Features (Guaranteed over temperature & supply) The quad operational amplifiers are a versatile commonmode-to-the-negative-supply ("single supply") type similar

Contextual Info: SIEMENS FH 520 Magnetic Fieldprobe Pin configuration 1 - S u p p ly C u r r e n t 2 + H a ll V o lta g e 3 - H a ll V o lta g e 4 + S u p p ly C u rre n t Dimensions in mm Features • High sensitivity • Low TC of sensitivity and internal resistance • Very flat package Kapton-foil with lead strips

Contextual Info: SCS-THOMSON M2732A m NMOS 32K 4K x 8 UV EPROM • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mAmax ■ INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM ■ COMPLETELY STATIC DESCRIPTION

Contextual Info: SIEMENS KSY13 Position Hall Sensor Features • • • • High sensitivity High operating temperature Low offset voltage Low TC of sensitivity and internal resistance • Plastic miniature package SOT 143 for surface mounting SMT Typical applications • Digital speed sensors

Hall Siemens

Abstract: 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor AF03 hall effect sensor spice model Hall Effect 3 pin hall 7a circuit diagram of hall effect hall 4 pin
Contextual Info: SIEM EN S KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low T C of sensitivity Specified T C of offset voltage Low inductive zero component

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C 33E marking marking TN4
Contextual Info: 711002b 001364145 33e? H P H IN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.

Contextual Info: 80C286 HARRIS S E M I C O N D U C T O R High Performance Microprocessor with Memory Management and Protection August 1996 Features Description • Compatible with NMOS 80286 The Harris 80C286 is a static CMOS version of the NMOS 80286 microprocessor. The 80C286 is an advanced, highperformance microprocessor with specially optimized capa­

Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in