0085I Search Results

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Abstract: iGSS 100nA Vgs 0v
Contextual Info: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50D2DM1 HIGH POWER S W I T C H I N G APPLICATIONS. M OTOR C ONTROL APPLICATIONS. Uni t in mm FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance