00777B Search Results

tms4256

Abstract: TMS4266
Contextual Info: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

ltl17

Contextual Info: flTblTSS 0 0 7 7 0 0 2 0 TM4256FC1 1,048,576 BY 1B IT DYNAMIC RAM MODULE INS TR A SIC /MEMORY OCTOBER'19 9 5 —REVISED FEBRUARY 1988 BSE D 1 ,0 4 8 ,5 7 6 x 1 Organization TM 4266FC 1 . . C SINGLE-IN-LINE PACKAGE (TOP VIEW) Single 5-V Supply (10 % Tolerance)

27c eeprom

Abstract: 27C291 74TTL
Contextual Info: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs

Contextual Info: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)

80C31 instruction set

Abstract: EXIF-91h
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

TMS4256FML

Abstract: k2000c
Contextual Info: I ôTblTSS 0D?7Gaa 1 • ASIC/ ME MOR Y x.' 8 Organization UtHizes Eight 256K Dynamic RAMs In Plastic Chip Carrier Long Refresh Period . . . 4 ms (266 Cycles) All Inputs, Outputs, Clocks Fully TTL Compatible 3-State Outputs Performance of Unmounted RAMs

10MILLISECOND

Abstract: A1176 TMS2732A
Contextual Info: TMS2732A 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY A U G U ST 1 9 8 3 —R EV ISED FEB R U A R Y 198 8 Organization . . . 4096 x 8 J PACKAGE TOP VIEW Single 5-V Power Supply • All Inputs/Outputs Fully TTL Compatible • Max Access/Min TM S2732A-17

TMS4500

Abstract: TMS4500A
Contextual Info: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock

tms4256fml

Contextual Info: TEXAS SU 172S INSTR 0D7707ti S • 262,144 ASIC/MEMORY 5SE TM4256EC4 BY 4-BIT DYNAM IC RAM M ODULE (TOP VIEW) Single 5-V Supply (10% Tolerance) A8 22-Pin Single-In-line Package (SIP) D1 Q1 CAS A7 A5 A4 Long Refresh Period . . . 4 ms (256 Cycles) All Inputs, Outputs, Clocks Fully TTL

TMS44C256

Abstract: TMS44C256-10 bojf tms44c251
Contextual Info: • a ^ L lT S S Q O T b 'n ? Q ■ TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES INSTR 2 SE ASIC/MEMORY N PACKAGE (TOP VIEW) 262,144 x 4 Organization Single 5-V Supply (10% Tolerance) DQlC 1 Ü 20 ]Vss DQ2[ 2 193 004 wC 3 18 ]DQ3

RY25

Abstract: 27C010-25 TMS27C010
Contextual Info: • 0^1725 0Q77531 2 ■ TMS27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ ONLY MEMORY TEXAS INSTR ASIC/MEMORY 2SE > Organization . . . 128K x 8 (TOP VIEW ) v p p C 1 U 32 ] v c c 31 ] P G M A16C 2 30 ] N C A15[ 3 29 ] A 1 4 A12[ 4 28 ] A 1 3 A7Ü 6

BUW11

Abstract: BUW11A buw11 transistor philips rf transistors buw111
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

Contextual Info: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986

BUW11A

Abstract: d777b BUW11 transistor BU 102
Contextual Info: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: | m o t e x 2.36mm .093" Diameter ^ ^ Power Connector FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Positive lock Voltage: 600V Current: 12.0A per circuit ■ Fully isolated terminals ■ Polarized housing assures proper mating K e C e p iO C ie

TMS4C1024

Abstract: TMS4C1025-80 TMS4C1024-80 TMS4C1024-12 TMS4C1024/5/7S
Contextual Info: TMS4C1024, TMS4C1025, TMS4C1027 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M G S 0 2 4 F — MAY 1986 — R E V IS E D N O V E M B E R 1990 1 048 576 x D[ 1 W[ 2 1 Organization U RAS [ 3 Single 5-V Supply 10% Tolerance Performance Ranges: TMS4C1024-60

Contextual Info: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs

Contextual Info: 1K x SN74ACT2151, SN74ACT2153 11 CACHE ADDRESS COMPARATORS _ D 3105, SEPTEM BER 19 8 7 -R E V iS E D MARCH 1990 Fast Address to Match Delay . . . 22 ns Max N PACKAGE TOP VIEW On-Chip Address/Data Comparator u R ESET [ 1 A4 [ A3 [ A2 [ A1 [ AO [ DO [

Contextual Info: • 0^1725 007715=1 T ■ T-46-13-25 TMS27C49 65,536-BIT UV. ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC49 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY A SI C/M EMO RY 5SE I> EPROMs/PROMs/EEPROMs TE XAS IN ST R . Te x a s ^ In s t r u m e n t s PO ST OFFICÊ B O X 1443 • HOUSTON, T É X A S 77001

ba7 transistor

Abstract: BUV90F lg system ic
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.

PDIP20

Abstract: PS020 ST626X-EMU ST62T08 b 0334
Contextual Info: F Z J S G S -T H O M S O N *7*. U ü lf lg lB O IlL llC T M D ® ST62T08 8-BIT OTP MCUs PRELIM INARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6 .0 V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range

LR19980

Contextual Info: m o i e x 2.36mm .093" Diameter Power Connector Receptacle FEATURES AND SPECIFICATIONS Features and Benefits Electrical • ■ ■ ■ Voltage: 600V Current: 12.0A per circuit Dielectric Withstanding Voltage: 5000V AC rms Positive lock Fully isolated terminals

TMS44C256

Abstract: sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12
Contextual Info: 0 ^ 1 7 5 5 007702=1 7 • TMS4C1024, TMS4C1025, TMS4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORIES TEXAS INSTR N PACKAGE TOP VIEW 1,048,676 x 1 Organization Single 5-V Supply (10% Tolerance) • ACCESS ACCESS ACCESS TIME TIME TIME TMS4C102-10 TMS4C102.-12