00687 Search Results

Contextual Info: UNITED MICROELECTRONICS Ta D E § L E S A I S OOOObû? 2 |~ 92D 00687 9325812 U N ITED MICROELECTRONICS U M D O U M 3 2 3 0 Analog Watch Features • 1 .3 ~ 1 .8 V operating voltage range ■ Only 32,768 Hz and trim m er capacitor are needed Cycle tim e and pulse duration are programmable by

7n52

Abstract: 1525P
Contextual Info: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3

D150*h02l

Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Contextual Info: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark

4n62k

Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Contextual Info: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3

2N62K3

Abstract: STD2N62K3 STP2N62K3
Contextual Info: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3

b01619

Abstract: D6NM60N
Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N

marking 81 SOT89

Abstract: ts 11783 H1 marking SOT-89 transistor
Contextual Info: 2STD1360, 2STF1360, 2STN1360 Low voltage fast-switching NPN power transistors Datasheet − production data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■

LD1117

Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
Contextual Info: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,

STD6NF10

Contextual Info: STD6NF10 N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STD6NF10 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.250 Ω 6A TYPICAL RDS(on) = 0.22 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

VNK5N07FM

Abstract: VNP5N07FI VND5N07 VND5N07-1 SGS-Thomson mosfet ipak
Contextual Info: VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V R DS on 0.2 0.2 0.2 0.2 Ω Ω Ω Ω I lim 5 5 5 5 A A A A 3 • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION

D5NM60

Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

STD15N06

Contextual Info: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD5NE10L

Contextual Info: STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY

STD2NC70Z

Abstract: STD2NC70Z-1
Contextual Info: STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STD2NC70Z STD2NC70Z-1 • ■ ■ ■ ■ VDSS RDS on ID 700V 700V < 4.7Ω < 4.7Ω 2.3 A 2.3 A TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY

DSA00104443

Abstract: STD4NB25
Contextual Info: STD4NB25 N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA ν ν ν ν ν ν TYPE VDSS R DS on ID STD4NB25 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.95 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STD40NF03L

Contextual Info: STD40NF03L N-CHANNEL 30V - 0.0095 Ω - 40A DPAK LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STD40NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.012Ω 40 A TYPICAL RDS(on) = 0.0095 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STD6N10

Contextual Info: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD16NE10L

Contextual Info: STD16NE10L N-CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET POWER MOSFET TYPE STD16NE10L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.10 Ω 16 A TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE

STGD7NB60H-1

Contextual Info: STGD7NB60H-1 N-CHANNEL 7A - 600V IPAK PowerMESH IGBT TYPE V CES V CE sat IC STGD7NB60H-1 600 V < 2.8 V 7A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

6012dm

Abstract: HTL LOGIC
Contextual Info: A m 6012/ 6012A • A m 6022/ 6022A 12-Bit High and Ultra-High Speed Multiplying D/A Converters DISTINCTIVE CHARACTERISTICS • • • • • • • All grades 12-bit monotonie over tem perature • Differential nonlinearity to ±0.012% 13 bits m ax over

Contextual Info: STDLED525, STFILED525, STPLED525, STULED525 N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes VDS 3 1 RDS on max ) s ( ct STDLED525 DPAK 1 2 STFILED525 3 STPLED525