004B5 Search Results

Contextual Info: bOE 1 • S23SbQS 004b51b 734 » S I E G SIEMENS LD 261 ARRAYS LD 262—269/260 SINGLE DIODE SIEMENS AKTIENGESELLSCHAF INFRARED EMITTER DIODES Package Dimensions in Inches mm 106 (2 7) 098 (2 5 ) 1 * » 138(3 5 ) 118(3 0 ) _ L Maximum Ratings

Contextual Info: bOE D • ô23SbDS 004b57fl 7 1 e! « S I E G SIEMENS 7 - 4 1- 0 $ SFH 483501 40-STRIPE ARRAY SIEMENS AKT IENGESELLSCHAF Package Dimensions in mm 6.7 6.3 2.4 _ 2.0 1. 2. 3. 4. N.C. NTC Thermistor NTC Thermistor Laser Cathode 5. Laser Anode 6. Monitor Diode Anode

lte4002s

Abstract: 005129 industrial linear ic
Contextual Info: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R

28F004B5

Abstract: 28F200B5 28F400B5 28F800B5 intel DOC 128KBYTE
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: January 1998 Order Number: 297862-003 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

intel topside mark

Abstract: flash device MARKing intel intel topside marking on flash memory 28F400B5 28F800B5 28F004B5 28F200B5 intel DOC intel flash marking intel topside marking
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: September 1998 Order Number: 297862-005 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

Power DIODE A30

Abstract: a30 DIODE DIODE A30
Contextual Info: bOE D • S235bOS 004b5bb TT7 H S I E 6 SIEMENS SFH 4448 TRANSCEIVER OPTICAL MODULE SIEMENS AKTIEN6ESELLSCHAF Package Dimensions in mm Emitter @1 HI Detector a FEATURES Maximum Ratings • Bidirectional Module with Integrated Beam Splitter Output power ratings refer to the SM fiber output. The operating

Contextual Info: bOE D • ÔE35bOS 004b55b DSfl ■ SIEG SIEMENS AKTIENGESELLSCHAF SIEMENS SFH4413 LOW POWER LASERDIODE IN T018PACKAG E Package Dimensions in mm FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode • Emission Wavelength: 1300 nm Output power ratings refer to the total em itted power at front window.

Transistor 3d

Abstract: PZB16040U
Contextual Info: ^ 3 3 - / / PZB16040U M AINTENANC E TYPE PHILIPS INTERNATIONAL 5t.E D 711DÖSb 004b500 470 • PHIN MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C narrowband power am plifier, operating at a frequency o f 1.64 GHz.

28F400B5

Abstract: intel 28F400b5-t80 28F004B5 28F200B5 28F800B5 E28F004B5-T80 intel DOC 28F004B5T80 E28F004B5T80
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: October 1997 Order Number: 297862-002 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

TMS 2370

Abstract: HA2-2605-5 HA-2605 HA2602 A 2602 16 pin
Contextual Info: blE ]> HARRIS SEMICOND SECTOR æ • M302571 004b537 040 H H A S HA-2600, HA-2602 HA-2605 HARRIS SEMICONDUCTOR Wideband, High Impedance Operational Amplifiers March 1993 Features • • • • • • • • • Description 12MHz Wide Bandwidth.

Contextual Info: bOE D T - 4 f-£>0 0235bG5 004b54H Sb3 « S I E G SFH 2210 SIEMENS TERNARY PIN PHOTODIODE T 01 8 P A C K A G E SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm Chip Location -*H] FEATURES Maximum Ratings • InGaAs/lnP PIN Photodiode

28F400B5

Abstract: 28F004B5 28F200B5 28F800B5 intel DOC 28f400b5t
Contextual Info: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 28F200B5, 28F400/004B5 28F800B5 SPECIFICATION UPDATE Release Date: May 1998 Order Number: 297862-004 The 28F200B5, 28F400B5, 004B5 and 28F800B5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

siemens ir receiver

Contextual Info: bOE D • 3E3SbDS 004b54b 1CH ■ SIEG SIEMENS SFH2223 SFH 2224 T W i-s o SIEMENS AKTIENGESELLSCHAF T E F*N A R V PIN MM FIBER PIGTAIL Preliminary Data Sheet FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode * 50/125 pm Multimode Pigtail * Sensitive Receiver for the 2nd and 3rd

RZ2731B60W

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.

HA 1137

Abstract: STP60N05 STP60N05FI
Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2

EL2039

Abstract: ha2830
Contextual Info: HARRIS SEMICOND SECTOR m HARRIS I V blE D IHAS 4302271 QOMbSbl 3bT HA-2839 SEMICONDUCTOR Very High Slew Raté Wideband Operational Amplifier March 1993 Features Description • Law Supply Currant. 13mA • Vary High Slaw Rata .

UMOV

Abstract: 4C550
Contextual Info: Am386SXLV Advanced Micro Devices High-Performance, Low-Voltage, 32-Bit Microprocessor with 16-Bit Data Bus DISTINCTIVE CHARACTERISTICS • — SMI coupled with I/O instruction break feature provides transparent power off and auto resume of peripherals which may not be “power aware”

Contextual Info: • 3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■ 711GflSb OD4tiS7ö GAS H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.

transistor w 431

Contextual Info: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high

HD66214T

Abstract: hitachi 4-bit lcd hd66214 97i-i Y1Y80
Contextual Info: H D 66214T M ic ro -T A B (80-Channel Colum n Driver in M icro-TCP) Description Features The H D66214T, the colum n driver for a large liquid crystal graphic display, features as many as 80 LCD outputs pow ered by 80 internal LCD drive circuits. This device latches 4-bit parallel

Contextual Info: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .

Contextual Info: 7^2^237 G G 4 b 4 cî 7 ÛT3 «SSTH STP50N06 STP50N06FI SGS-THOMSON id * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI . . • . . . . . V dss RDS on Id 60 V 60 V < 0.028 n < 0.028 Q 50 A 27 A TYPICAL Rds(oh) = 0.022 £2

28f800b5

Abstract: 28F004B5 28F200B5 28F400B5 power supply aps 231
Contextual Info: E ADVANCE INFORMATION SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5, 004B5 n n n n n n n SmartVoltage Technology  Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes  Increased Programming Throughput at 12 V VPP Very High-Performance Read

Contextual Info: HARRIS SEMICON] SECTOR LIE ]> • HA-2548 3 “ SH S Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Features • Description High Stow • Low Offset