0043 Search Results

Contextual Info: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

Contextual Info: AHU u m川 i T - C E J R υ n P UNH nLU AA E L HHい ハHV R T ALTERATION 1 S S U E I l i CAPACITANCE ITEM CODE ￨ F * i ECWH 123620 VC 1 0， 0036 (362) i If 123920 VC 1 0， 0039 (392) I f 124320 VC 0 0043 (432) H 1 2 4 7 2 0 VC I 0.0047 (472) 7 1 2 5 1 2 0 V C 1 0.0051 (512)

2SC1553

Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
Contextual Info: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

b0948

Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Contextual Info: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

V7-1C17D8-002

Abstract: i8700 FO503
Contextual Info: FO-50360-L CW-B1651 REV DOCUMENT 4 0043895 CHANGED MB H BY CHECK 22SEP08 BL R S T E E L ACTUATOR , 8 7 0 ± . 02 0 040 . 0 6 0MAX — , PRETRAVEL . 32 c r r r - _ I r . 6 0 0 ± . 02 0 OPERATING POS I T I O N . 4 06±. 003 . 25 i . I I 4 ± . 002 4 ± . 00 2 HOLE

T3D DIODE

Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are

Contextual Info: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

Contextual Info: REV A REVISIONS DESCRIPTION REDRAWN DATE APPROVED 10-21-88 DAC/S.I. M.Y. BB 5 -2 3 -9 0 011 REDRAWN IN CAD 01 2 VSWR: N/A WAS 335. RF LEAKAGE: 90 WAS 012. CONT.RESIS., CTR & OUTER 4.0 WAS 2.0. FORCE CKM 10-30-90 KCM TO ENGAGE: 2 WAS 7, ECN 90-0701 02 o MAJOR CHANGE PER ECN 92-0043-2 AND UPDATED

2N2991

Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
Contextual Info: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3

TO111

Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
Contextual Info: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256

Contextual Info: Datasheet for part number MKJ4A1F6-7S Our Catalog Part Number: MKJ4A1F6-7S Our Global Manufacturing Part Number: 155281-0043 Brand: Cannon Product Category: Circular Product Line: Trinity MKJ Series: MKJ4 Product Datasheet Series Class Shell Style Shell Size

Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are

diode t62

Contextual Info: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

BDT65

Abstract: bdt65c bdt64
Contextual Info: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,

transistor 1BT

Abstract: BDT62C PHILIPS npn 1bt BDT63B
Contextual Info: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

1NTC11

Abstract: D78238
Contextual Info: • Í .LI27SE5 004317S 4 ^ NEC NEC Electronics Inc. B n ECE JUPD78238 Family pPD78233/234/237/238/P238 8-Bit, K-Serîes Microcontrollers With A/D and D/A Converters, Real-Time Output Ports June 1993 Description The ¿/PD78233, piPD78234, ¿JPD78237, ^PD78238, and

946f

Contextual Info: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.

Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

Contextual Info: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.