0041 Search Results

THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

BY249-300

Abstract: TAG 600 600R BY249 BY249-300R
Contextual Info: SbE D • 711002b 0041122 =551 « R H I N T -0 1 -1 7 BY249 SERIES PHILIPS INTERNATIONAL 5bE ]> SILICON RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0-22 0 plastic envelopes, intended for power rectifier applications. The series consists of the following types:

M3263

Abstract: PBYR30035CT PBYR30040CT PBYR30045CT PBYR30 M3269 20UNC
Contextual Info: PBYR30035CT PBYR30040CT PBYR30045CT 711002b 0041 fl14 151 • PHIN DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL ■ -P 0 3 -Z Ì SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

RH101

Abstract: MSK0041KRH 100HZ 10KHZ LH0041 CURRENT LIMIT APPLICATION MSK0041RH
Contextual Info: MIL-PRF-38534 CERTIFIED RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Tested to 300 Krads(Si) (Method 1019.7 Condition A)

Contextual Info: RELEASED PER ECR8036 B REDRAW PER ECR8988 DW A JED 2X .300 7.62 DESCRIPTION COL 08/21/06 222-010-00415G BY APPD DATE REV JEM 02/10/04 FIRST MATE/LAST BREAK 222-010-00416G .570±.010 14.48±.25 .580 14.73 5 .484 12.29 .035 .89 .450 11.43 5 .236 5.99 BRACKET

KAF-4000

Contextual Info: KAF-50100 IMAGE SENSOR 8176 H X 6132 (V) FULL FRAME CCD IMAGE SENSOR JUNE 24, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0041 KAF-50100 Image Sensor TABLE OF CONTENTS Summary Specification . 4

P25N06

Abstract: 25n06 rfm25n t3901
Contextual Info: SbE D î J j • 43QS271 0041742 713 H A R R IHAS R I S HARRIS SEMICOND SECTOR F R M F P 2 5 N 6 2 5 N 6 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 — " T -S fl-O J Package Features TO-204AA • 25A, 50V and 60V • rDS on = 0.0 7ÎÏ

K1466

Contextual Info: DATE REVISED: 11/28/08 CATALOG NUMBER 00419- 303-3 MATERIAL AND FINISH TNC HOUSING, GPO SHROUD, AND JAM NUT: CENTER CONTACT: DIELECTRICS: LOCK WASHER: C R ES 303; PASSIVATED BeCu; GOLD PLATE 5 0 - 1 0 0 MICROINCHES OVER NICKEL PLATE 50 MICROINCHES MIN. VIRGIN PTFE

Contextual Info: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling

VMIVME-4105

Abstract: JN17 VMIVME-3100 MC68000 panduit 96 pin connector VMIVME 1111 instruction manual VMIVME F5123
Contextual Info: V M I V M E - 4 1 05 8 -C H A N N E L 1 2 -B IT M U L T IP L Y IN G D IG IT A L -T O -A N A L O G C O N V E R T E R B O A R D INSTRUC TIO N MANUAL DOCUMENT NO: 500-004105-000 U Revised July 21, 1995 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY

VMIVME 4140

Abstract: VMEbus Handbook MVME 322 VMIVME-4140 TS 4140 S2A00 MVME 2A00 2A01 S000
Contextual Info: VMIVME-4140 32-Channel 12-bit Analog Output Board Product Manual 12090 South Memorial Parkway Huntsville. Alabama 35803-3308. USA A GE Fanuc C om pany 256 880-0444 ♦ (800)322-3616 ♦ Fax: (256) 882-0859 500-004140-000 Rev. D 12090 South Memoria! Parkway

E2934-S925-G1

Abstract: E2934-S926-G1 9007-Type E2934-S928-G1 E2934-S929-G1 limit switch cam type 9007 E2934-S931-G1
Contextual Info: UKSYS1% TEXT11 SQD99-0041-0-2c5 LCP: 5001 CMS: 813-0 OP: CD COMP:24-09-99 Hour: 12:01 Zoom:100 Colour: CMYK Class 9007 9998 HEAVY DUTY LIMIT SWITCHES. Types T and FT Technical Data and Replacement Parts Kits Replacement Parts and Accessories Use With

Contextual Info: REJ09B0036-0041Z M32C/84 Group 16/32 Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.41

Contextual Info: This document was generated on 04/16/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 15-06-0041 Active Mini-Fit BMI 4.20mm Pitch Mini-Fit® BMI Receptacle Housing, Dual Row with Panel Mount Ears, PA

5082 schottky

Abstract: 5082-0087 HP 5082-0024 5082-2713 HP 2835 5082-0097 node B 3206 5082-0024
Contextual Info: DE § 4 4 4 7 5 0 4 QDQSñlS S | ~ 4447584 H E WL E T T - P A C K A R D » 58G CMPNTS 02815 D - T - Ö HEW LETT PACKARD SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0031 5082-0041 7 - 0 7 5082-0057

BJ226

Contextual Info: TABLE 1 SH : i 2 3 4 5 5 7 3 3 1 2 3 4 5 6 7 8 9 '0 '1 CDNN IMPD MATERIAL TYPE OHMS > PL220 1-0442-01 1 CJ220 1-0443-011 PL240 1-0446-011 CJ240 1-0445-011 50 BJ226 1-0472-011 BJ229 1-0473-011 BJ246 1-0046-011 BJ249 1-0047-011 UPL220 1-0468-011 75 UPL240 1-0041-011

BJ225

Abstract: 14058 pic tnc
Contextual Info: TABLE IMPD MATERIAL /3\ SH CDNN TYPE OHMS 1 PL220 1-0442-005 2 CJ220 1-0443-005 PL240 3 1-0446-005 4 CJ240 1-0445-005 50 5 BJ225 1-0472-005 6 BJ229 1-0473-005 BJ246 7 1-0046-005 8 BJ249 1-0047-005 g UPL220 1-0468-005 75 10 UPL240 1-0041-005 50 il PL223

Contextual Info: Accessories Surface mounting back box extender ring for adjustable microwave sensor 0041593 Range features PRODUCT OVERVIEW Ordering number 0041593 EAN code 5410288415932 Certifications CE Configured without PC Y es Programmable v ia remote handset Dimensions

Contextual Info: Switches in momentary action PDK Models Construction Dimensions Drilling diagram Circuit diagram PDK Variations 1 pol. NC 1 pol. NO Contact material Contact material Ag* 0041.032. X Au 0041.036. X Ag* 0041.033. X Au 0041.037. X schwarz black Color of button

Contextual Info: MASW-004102-12760 HMIC Silicon PIN Diode Switch with Integrated Bias Network Rev. V3 Features •       Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

Germanium Power Diodes

Abstract: 1N273 1N279 Germanium Power Devices "Germanium Diode"
Contextual Info: iQAQQfiS CENTRAL SEMICONDUCTOR 920 00411 c DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 and 1N279 types are gold bonded germanium diodes mounted in hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order.

minimelf marking

Abstract: p 4614 4626 1085P
Contextual Info: SbE D • 7^2^537 0041bl3 1TD «SfiTH r r z SGS-THOMSON ^ 7 # S T-H-Û7 M t œ n m g i r a œ s TMM 4614 -» TMM 4627 G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 6.2V D E S C R IP T IO N Low leakage, low impedance, low noise Zener diodes A B S O L U T E R A T IN G S limiting values

2sc123

Abstract: 2SC1236 2sc1 opto ic diagram 00417
Contextual Info: TOSHIBA -CDISCRETE/OPTOl 9097250 TOSHIBA 39C DI S C R E T E / O P T O > 00416 rO U H F -C -y o u h f ~ c - v k- n m m O |tb O U H F ~ C Band Low Noise Amplifier, * -f ? X Unit U H F ~ C Band Oscillator and in m m High Speed Switching Applications G pe =

IN3155

Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Contextual Info: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values