003SA Search Results

TO82

Abstract: SU 179 PM106
Contextual Info: n/A-COM IINC/JNZAC SIV S K « • ^ „3 177 0 003Safl TBQ ■ A N Z T-17-x><\ ANZAC RF & CELLULAR COMPONENTS l/Q Demodulators MODEL NO. FREQUENCY MHz CARRIER l/Q EQKR8-82.2 81.75 - 82.2 AMPLITUDE UNBALANCE (dB) lÿp Min PHASE UNBALANCE (deg) Typ Min 0.25 0.5

BSV78

Contextual Info: BSV78 to 80 J V N-CHANNEL FETS Silicon symmetrical n-channel junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for switching applications. The devices have the feature: low 'on' resistance at zero gate voltage.

SDH 209

Abstract: mitsubishi optical transmitter photodiode STM-16
Contextual Info: MITSUBISHI TQ9-01-209 1/22 Nov. 30. 2001. MITSUBISHI (OPTICAL DEVICES) Preliminary MF-2500MXB-xxxxx SONET / SDH TRANSCEIVER WITH 16:1 MUX / DEMUX OC48/STM-16 Transponder Features 1.Jitter fully meet, and Fine Optical waveform 2.SONET / SDH long haul application

ls404cb

Abstract: "Bandpass Filter" 50 hz
Contextual Info: 4 2E G ì » 7^2=1237 □035fl7b S C S - T H O M S O N S ISGTH s 6 S-THOMSON T ~ 7 9 -06-20 mo LS404 HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ SINGLE OR SPLIT SUPPLY OPERATION VERY LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE

Contextual Info: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA

RXIDk 2H

Abstract: asea ri 5A relay RTXP 18 5 MVA generator MVA generator transformer 2 mva RXIDG 838-AA 838-HA 1MDU09024-EN
Contextual Info: Time-overcurrent relays and protection assemblies RXIDK 2H, RAIDK, RXIDG 21H, RAIDG Page 1 1MRK 509 002-BEN Issued January 2004 Revision: A Data subject to change without notice SE970134 (SE970150) Features RXIDK 2H relay and assemblies • Single-, two-, three-phase and three-phase

Contextual Info: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.

3SB23 04-2A siemens

Abstract: 3SB24 3SB12 01 3ta21 siemens IEC 60947 VDE 0660 3SB14 00-0C siemens 3SB36 Sirius 3SB3 3SB14 3sb29
Contextual Info: Commanding and Signaling Devices Introduction • Overview 3SB2 3SB30, 3SB32 3SB31, 3SB33 3SB35, 3SB36 16 mm Plastic, round 22 mm Plastic, round 22 mm Plastic, square 22 mm Metal, round ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔ ✔ -✔ ✔ ✔ ✔ ✔ ✔ ✔

ASEA motor bv

Abstract: TRW catalogue static overcurrent relay RXIG 2 RTXP10 circuit diagram of rxig 28 ASEA mt 100 circuit diagram of 7432 RK 713.2 DS 7432
Contextual Info: ASEA Catalogue RK 65-16 E Edition 1 Single-phase overcurrent protective relays Used primarily as earth-fault pro­ tection. Static or electro-mechanical current relays. Different versions with respect to tripping and Indication, Contents Page General 2 Design

z80 dart

Contextual Info: Z8470Z80DART Dual Asynchronous Receiver/ltansmitter Specification FEATURES • Two independent full-duplex channels with separate modem controls. Modem status can be monitored. ■ Break generation and detection as well as parity-, overrun-, and framing-error detection are available.

2n4393

Abstract: 2n4392 2N4391
Contextual Info: 2N4391 to 4393 N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching, application in industrial service.

2N3820

Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET

Z8400

Abstract: Z84C40 Z84C43 z80 cio Frequency Multipliers x5 Output 4000 z80 dma H336 Z0844X04 z80 SIO HDLC
Contextual Info: Product Specification < £ 3 L 0 5 Z8440/1/2/4, Z84C40/1/2/3/4 S erial I n pu t /O u t p u t C o n tr o ller FEATURES • Two independent full-duplex channels, with separate control and status lines for modems or other devices. ■ Data rate in the x1 dock mode of 0 to 2.0M bits/

"P-Channel JFET"

Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
Contextual Info: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.

LOG RX 2 - 1031 16 pin IC

Contextual Info: SbE D • 7TETE37 GQ3Ô6Q4 * - S G S - T H O M S O N ^ O M T io K S m t lO t - 7 / - i ■ SGTH E T C 5 0 6 7 i E T C 5 0 6 4 S 5 s-TH0riS0N SERIAL INTERFACE CODEC/FILTER _W ITH RECEIVE POWER AMPLIFIER ■ COMPLETE CODEC AND FILTERING SYS­

ci 4093

Abstract: IC 4093 2n4091
Contextual Info: 2N4091 to 4093 J V N-CHANNEL FETS Silicon symmetrical n-channei depletion type junction field-effect transistors in T0-18 metal envelopes with the gate connected to the case. The transistors are intended for low power switching applications in industrial service.

2N5460

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 DESCRIPTION P-channel silicon junction field-effect transistor in aTO-92 plastic envelope. It is intended for use as an analog switch and an amplifier. 2N5460/5461/5462