003S7 Search Results

am9590

Abstract: ST412-type 95C82
Contextual Info: 2ÖE D A D V A N C E D MI C R O D E V I C E S — • 0557525 00357^0 7 r r - s z - ' b s ' Am95C82 — Advanced Micro Devices Disk Data Separator DDS DISTINCTIVE CHARACTERISTICS ■ Complete single-chip Disk Data Separator for floppy disk and hard disk drives (minimal

Contextual Info: BFQ10 to 16 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended for high performance low level differential amplifiers.

Contextual Info: BFS21 BFS21A _/ V MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip. These devices are intended fo r low level differential amplifiers.

Contextual Info: »2 JLC E PRELIMINARY PRODUCT SPECIFICATION Z 80185/ Z 80 1 95 SMART PERIPHERAL CONTROLLERS FEATURES • Z80185: 32 Kbytes ROM Z80195: ROMIess ■ Enhanced Z8S180 MPU - Code Compatible with Zilog's Z80 /Z180w CPUs - Extended Instructions - Two Enhanced DMA Channels

Contextual Info: Advanced Micro Devices MACH220-10 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ ■ 8 PAL blocks with buried macrocells 10 ns tPD ■ ■ 80 MHz fMAx external

asea EH 9-10

Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
Contextual Info: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord­ less phone system with frequency range under 60 MHz in ail over the

Contextual Info: KM48V514DT CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Z0840008

Abstract: z0840004 Z0840006 TDA 8090 Z80CPU
Contextual Info: < £ 2 iL G E P ro d u c t S p e c ific a tio n Z8400/Z84C00 NMOS/CMOS Z80 CPU Central Processing Unit FEATURES The extensive instruction set contains 158 instructions, including the 8080A instruction set as a subset. • NMOS version for low cost high performance solutions,

inductive proximity detector ic

Abstract: metal detector coil DIAGRAM Proximity Detectors for metal detector metal detectors IC M390 OM390 OM391 inductive proximity detector with transistor 4080Ts 723 voltage regulator ic
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bLSB'ïBl DD3E7S7 'ÌSD ■ IAPX O M 390 OM391 HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated circu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r c o n stru ctio n , especially

TL829

Abstract: VIDEO TIMING CONTROLLER VTC 2BAK35M468950GLE30A 0X033C Trident vga s3 65 virge graphics virge
Contextual Info: F u n c t io n a l D e s c r ip t io n Functional Overview Rockwell’s VideoStream II products are a family of single-chip, pin- and register-compatible solutions for processing analog NTSC/PAL video into digital 4:2:2 YCrCb video. They provide a comprehensive choice of capabilities to enable the

BFW 10 fet

Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.

D485505

Abstract: ax253
Contextual Info: m b427S2S 0035734 EMfl JJPD485505 Line Buffer for Communications Systems INECE NEC Electronics Inc. Preliminary Information_ A ugust 1992 N E C ELECTRONICS INC Description Pin Configurations The ¿/PD485505 is a 5048-word by 8-bit d ual-port line buffer fab ric a te d with a silicon-gate CM O S process.

Contextual Info: FINAL COM’L: -15/20 IND: -18/24 MACH230-15/20 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 70 Inputs ■ 128 Macrocells ■ 64 Outputs ■ 15 ns tpD Commercial 18 ns tpD Industrial ■ 128 Flip-flops; 4 clock choices

Contextual Info: KM48V512DT CMOS DRAM ELEC TR O N IC S 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

qml-38535

Abstract: 5D2 diode smd 54ACT161 GDFP2-F16 GDIP1-T16 5962-R410-97
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes IAW NOR 5962-R410-97. 97-08-11 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak 98-04-20 Monica L.Poelking REV SHEET REV B B B B B B B B B SHEET 15 16

TDA 2840

Abstract: Z0840006 Z0840004 A40M3 Z0840008 Z84C0020 Z8400 Z84C0010 Z84C008 z80 microprocessor
Contextual Info: < £ 3 L O E P r o d u c t S p e c ific a tio n Z8400/Z84C00 NMOS/CMOS Z80 CPU Central Processing Unit FEATURES The extensive instruction set contains 158 instructions, including the 8080A instruction set as a subset. • NMOS version for low cost high performance solutions,

BFQ10

Contextual Info: BFQ10 to 16 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended fo r high performance low level differential amplifiers.

resistor NTC 10 0539

Abstract: capasitor variable power supply IRF830 APPLICATION IC 13700 Fuse 250V 2A 12G471K la 7522 BALLAST fluorescent lamp DIAGRAM samsung 220V LED fluorescent circuit diagram 12v inverter 220v diagram
Contextual Info: KA753 1 ELECTRONICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7531X is a ballast control 1C improving power-factor.t The following is the features incorporated in it. It includes PFC control block so that the power-factor can be over 0.99 % and the high voltage at lamp driving block

Am78C201

Abstract: ultrasound block diagram amd interwave echo delay reverb ic interwave XTAL20 echo reverb ic am78c201kc 2.4576mhz crystal AM7-8
Contextual Info: a PRELIMINARY Advanced Micro Devices Am78C201/202 InterWave Interactive Audio and Wavetable Solution • Supports multiple standards: DISTINCTIVE CHARACTERISTICS ■ 32-voice stereo wavetable synthesizer — Microsoft Windows®95, DirectSound ■ Integrated effects processor

qml-38535

Abstract: 54ACTQ374 GDFP2-F20
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED 98-04-07 Monica L. Poelking Add RHA data. Editorial changes throughout. - JAK REV SHEET REV A A A A A A A SHEET 15 16 17 18 19 20 21 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7

PWM10-PWM11

Contextual Info: PRELIMINARY CUSTOMERPROCUREMENlSPECMGmON 9S I f iC 1 I L Ü D Z90110/120/130 40-PINLOW-COSTDIGITAL T fj evtston C ontrot j er FEATURES n Part Z 90110 Z90120 Z90130 ROM KB ‘ G eneral-Purpose 4 6 8 RAM* (Kbyte) Speed (MHz) n On-Screen Display (OSD) Logic Circuits

ETC5057-X-ETC5054-X

Contextual Info: SbE D 7 C12C1E37 S G S -T H O M S O N ItLC DD3B777 b34 ISGTH T-75WJ-/3 ETC5057-X ETC5054-X EXTENDED TEMPERATURE RANGE SERIAL INTERFACE CODEC/FILTER S G S- THOMSON - 40 'C TO + 85 'C OPERATION COMPLETE CODEC AND FILTERING SYS­ TEM COMBO INCLUDING : . Transmit high-pass and low-pass filtering

12g471k

Abstract: resistor NTC 10 0539 ntc 10D-11 Fuse 250V 2A ac overvoltage protection TNR12G471K FUSE M1 250v G H14E KA7522
Contextual Info: KA753 1 ELECTRONICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7531X is a ballast control 1C improving power-factor.t The following is the features incorporated in it. It includes PFC control block so that the power-factor can be over 0.99 % and the high voltage at lamp driving block

qml-38535

Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A