0035T Search Results

Contextual Info: KEMET Part Number: T252B336K015MS7200 T252B336K015MS7200, M39003/06-0035TR, CSR33D336KM7200 Capacitor, tantalum, 33 uF, +/-10% Tol, 15V@85C General Information Manufacturer: KEMET Electrical Specifications Value: 15V Voltage DC @ 125C: 10V Tolerance: Application:

D43256A

Abstract: TINA NEC electronics upd43256a
Contextual Info: E C ELECTRONICS INC NEC ELECTRON DEVICE / b2E D • b4S75E5 OOBSbMT fiTfi M N E C E s h e e MOS t INTEGRATED CIRCUIT ¿¿PD43256A 256K-BIT CMOS STATIC RAM EXTEN DED TEMPERATURE VERSIO N DESCRIPTION The ¿¿PD43256A is a high speed, low power, 32K words by 8 bits CMOS static RAM fabricated with advanced

BFR84

Abstract: transistor bfr84
Contextual Info: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,

Contextual Info: il Am7905A Advanced Micro Devices Subscriber Line Audio-Processing Circuit SLAC Device DISTINCTIVE CHARACTERISTICS • 4.096-MHz, 64-channel expanded mode operation Uses digital signal processing ■ Built-in test modes ■ Six user-program m able digital filters

Contextual Info: Am79C02/03/031 A Advanced Micro Devices Dual Subscriber Line Audio Processing Circuit (DSLAC ) Devices D ISTIN CTIVE C H A R A C T E R IS T IC S • Softw are programmable: ■ Dual PCM ports -U p to 8.192 M Hz each (128 channels per port) - S L I C impedance

BFR29

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.

Contextual Info: PRELIM INARY COM’L: -7/10/12/15/20 Z I Advanced Micro Devices M A C H 1 3 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 7.5 ns tpo

TAA 691

Contextual Info: KM48V512DJ CMOS DRAM ELECTRONICS 512K X 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

transistor BD 263

Contextual Info: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in

Contextual Info: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

KM48V2100B

Abstract: 2100BK
Contextual Info: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: FINAL COM’L: -10/12/15/20, Q-15/20 IND: -12/14/18/24 M A C H 2 1 0 A -1 0 M A C H 2 1 0 -1 2 /1 5 /2 0 M A C H 2 1 O A Q -1 5 /2 0 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells

Contextual Info: SPRAGUE WET AND FOIL TANTALUM CAPACITORS TY P E 138D Herm etically-Sealed, Gelled-Electrolyte Sintered Anode TANTALEx@Capacitors w ith True G lass-to-Tantalum Seal J MPROVED RELIABILITY through the use of a glass-to-tantalum true hermetic anode seal is the prime feature of the Type 138D gelled-electrolyte sintered anode Tantalex capacitor. This con­

BF981

Abstract: TRANSISTOR bf981
Contextual Info: BF981 JV SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional com m uni­ cation equipment.

BSV81

Abstract: rce3 VBD30
Contextual Info: BSV81 J V _ N-CHANNEL IG-MOS-FET Sym m etrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits,

731 tico

Abstract: tico 731 marking caa TQFP Package AMD tico 731 103 mach 1 family amd
Contextual Info: Zi PRELIMINARY The MACH 5 Value Plus Family Advanced Micro Devices Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture — 5-V devices will not overdrive 3-V inputs safe for mixed voltage — Safe for hot socketing

MACH465

Abstract: MACH465-12 MACH465-15 ge-57
Contextual Info: FINAL M A C H 4 6 COM’L: -12/15/20 5 - 1 2 / 1 5 / 2 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, in-circuit programmable

am85c30

Abstract: AM8SC30-16 53C80 80C286 WR10 am85c30-8 intel 80188 003Sh ETFTR rda 580 FM
Contextual Info: ADVANCED MI C R O D E V I C E S 23E D • 0557555 0Q35bl5 0 ■ T -7 5 -3 T 7 -0 -7 Am85C30 AMD Cl Advanced Micro Devices Enhanced Serial Communications Controller DISTINCTIVE CHARACTERISTICS ■ Fastest data rate of any Am8530 — 8.192 M H z /2.048 Mb/s

C15 DO-34

Abstract: B6V2 C3V33
Contextual Info: BZV60 SERIES J \ _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

2n4080

Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
Contextual Info: RAYTHEON/ 57 SEMICONDUCTOR SMALL SIGNAL TRANSISTORS p r o d u c t s p e c ific a tio n s 7597360 R AY THEON CO» 27C Ultra High Speed Logic Switches •raytheonI GV 75T?3t,0 □ □ 0 3 5 5 e] 1 PNP 03559 D J - 37- / 3 Popular Types Description Ultra high speed Silicon epitaxial