003 SOT143 Search Results

LPCC-16

Abstract: SSOP-16 SOT-143 212 sot-23 QFN-20 SOT 213 LPCC-20 transistor sc 308 MSOP-10 SSOP-20
Contextual Info: Package Style/Part Number Reference Package Style Packaging Part Number Suffix Package Style Packaging Part Number Suffix Ceramic Surface Mount Package -A2 SSOP-8 Chip/Wafer -000 5 Lead Ceramic Package -65 SOT-23 -001 SOT-5 -72 SOT-23 -003 SOT-6 -73 SOT-23

SMP1322-075

Abstract: sot-23 Pm9 SMP1321-004
Contextual Info: GaAsRFICs and Modules PIN Diodes Switching PIN Diodes A w s Common Anode SOT-23 Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1340-001 ♦ SMP1340-003 ♦ SMP1340-004 ♦ SMP1340-005 PS1 PS9 PS3 PS2 Millimeterwave ICs and Discrete Semiconductors Multi-Function Modules

DATA VISION LCD MODULE p121

Abstract: smd fuse p150-24 DATA VISION P123 smd fuse p150
Contextual Info: CY8CKIT-003 PSoC 3 FirstTouch Starter Kit Guide Document # 001-49613 Rev. *H Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2009-2012. The information contained herein is subject to change without notice.

Contextual Info: Q> p 3 Q. § c o gCD CO Semiconductor Package Configuration Reference n ? / a y y Single SOT-23 -001 / \y y S / \ y y Common Anode SOT-23 (-003) Common Cathode SOT-23 (-004) g I H /X Il y h Series Pair SOT-23 (-005) y ? S H y Reverse Series Pair SOT-23 (-006)

marking VB SOT-23

Abstract: SMP1302-079 P1307
Contextual Info: GaAs RF ICs and Modules PIN Diodes Attenuator PIN Diodes a / y il Iy y y H A y t * * h œ a B Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1302-003 ♦ SMP1302-004 ♦ 1 SMP1302-005 PF9 PF3 PF2 SC-70 SC-70 SC-70 ♦ SMP1302-073 ♦ SMP1302-074 PF9 PF3 ♦ 1SMP1302-075

Contextual Info: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM

BH204N

Abstract: BH403a M208D BH198 BH202N M208A
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48

M208A

Abstract: BMH76
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48

S3928

Abstract: Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes
Contextual Info: 13 A lpha Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes Features For High Volume Commercial Applications SOD 323 Industry Standard SO T-23, SO T-143, and S O D -323 Packages SOT 23 SOT 143 Tight Parameter Distribution High Signal Sensitivity

crystal 12mhz

Abstract: Si2301BDS-T1-E3 1P SOT23 SD028000080 X5H012000FI1H SE070104Z80 ls-4272p AES1610-C-DF-TR-GO00-AC 16w SOT23 7A12000026
Contextual Info: Material List by Single-Item/Multi-Level - Partial -Date : 04/26/2008 Time : 15:01:24 Drawing No: 4559M6 Plant: CN50 Revision: C

PJ 3139

Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
Contextual Info: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “

SP0503BAHT

Abstract: 505B SOT23-6 503B SOT143 SP0505BA 504 SOT23-6 504 ba 048 sot23-6 SP0504BAAT
Contextual Info: TVS Avalanche Diode Array SP0502BA, SP0503BA, SP0504BA, SP0505BA, SP0506BA Surface Mount Transient Voltage Suppression Arrays for ESD Protection Features The surface mount family of arrays are designed to suppress ESD and other transient overvoltage events. These arrays

c037

Abstract: s 404 p
Contextual Info: Package Dimensions Micrel PIN 1 DIMENSIONS: INCH MM 0.380 (9.65) 0.370 (9.40) 0.255 (6.48) 0.245 (6.22) 0.135 (3.43) 0.125 (3.18) 0.300 (7.62) 0.013 (0.330) 0.010 (0.254) 0.018 (0.57) 0.380 (9.65) 0.320 (8.13) 0.130 (3.30) 0.100 (2.54) 0.0375 (0.952) 8-Pin Plastic DIP (N)

NE25139T1U73

Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz

EIA-481-2

Abstract: EIA-481-3 MIC2557BM MICREL MARK Micrel tape and reel
Contextual Info: Table of Contents Section 12: PACKAGE INFORMATION Packaging for Automatic Handling . 12-3 Mounting Information . 12-6

NEC Ga FET marking A

Abstract: NE25139T1U74 NE25139U NE25139T1U71
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz

Contextual Info: Central BAS28 Sem icon du ctor Corp. DUAL, ISOLATED HIGH SPEED SW ITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed

212 s sot-23

Abstract: 212 sot-23 LPCC-20 338 sot-23 a3 sot143
Contextual Info: o JO Package Style/Part Number Reference <o < o PACKAGE STYLE PACKAGING PART NUMBER SUFFIX Ceramic Surface Mount Package -A2 8 Lead Ceramic Package -60 Ceramic Surface Mount Package -A3 LQFP-32 7 x 7 mm -61 Ceramic Surface Mount Package -A4 SSOP-8 -62 Chip/Wafer

Contextual Info: MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 ESD5V0T143-4U Features • • • • • • • 500 Watts Peak Power per Line (tp = 8/20us) ESD Protection > 25 kilovolts

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

U73-U74

Abstract: 14E-14
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz

NE25139

Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

KS05B3

Contextual Info: KS05B3 VOLTAGE: 5.0 V Elektronische Bauelemente 40 W Transient Voltage Suppressors Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-143 DESCRIPTION . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.