002T4 Search Results

by448

Contextual Info: A £ G CORP 17E D 002T45Ì3 QGQT773 S • BY 448 •BY 458 TTSILIipililiKjKliifl electronic Creative Technologies 7- o b i s ' Silicon M esa Diodes A p p lica tio n : High voltage rectifier Features: • Hermetically sealed package • Glass passivated junction

aeg d 188

Abstract: aeg d 188 s 1000 ir 0588 DIN 4154 BR135
Contextual Info: A E G CORP 17E D 002T42b OOCHflT? 1 1N 4154 S electronic CreativeTechnotogies Silicon Epitaxial Planar Diode A p p lica tio n s: Extreme fast switches D im en sio n s In m m ottoe Cathode \ -I I - II- 11 <3.9 1 >26 g<tfl / *<0.65 • »

Contextual Info: 0029426 A E G CORP 01 DE|002T42I d □OQS'lVD T | A 618 S Typenreihe/Type range A618S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsSpitzensperrspannung Periodische RückwärtsU rrm Spitzensperrspannung Rückwärts-Stoßspitzenspannung

ir 0588

Abstract: LL4150
Contextual Info: A E G CORP 17E D 002T42b 000=1071 5 LL4150 TTECLESIFDJjKllrStMiK! electronic Creative Technolog >es T-03-01 Silicon Epitaxial Planar Diode Application: High speed switch Dimensions in mm Term inals are tin plated C ath o d e Glass case SO D 80 MiniMELF Weight max. 0.1 g

BYV63

Abstract: Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken
Contextual Info: A E G CORP 17E D 002=i42b □G G ' i f i 3 S 1 • BYV 61 •BYV 62 •BYV 63 ITilLiiFttllliSKlliil electronic Creative Technologies T^es-IS' Silicon M esa Diodes Applications: Very fast rectifier and switch for example for switch mode power supply Features:

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

Contextual Info: N-CHANNEL POWER MOSFETS SSD2101 FEATURES • • • • • • • 8SOIC Lower R d s o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

AMD am3 socket pinout

Abstract: amd socket am3 pinout AMD 140 Socket AM3 amd pinout diagram socket AM3 MR 4710 AMD Socket AM3 amd AM3 PIN LAYOUT MR 4710 IC OO3A MARKING AMD socket AM3 pin diagram
Contextual Info: ADV MI CRO PLA/PLE/ARRAYS COM’L SÛE 02S7S2b D 0 0 8 =1 4 4 3 3 B A MDS MIL E T—46— 19-13 Advanced Micro Devices PAL20R8 Family 24-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay Easy design w ith PALASM softw are

B45A

Abstract: AEG motor buv 71 aeg d 188 aeg d 188 s 1000 aeg t 188
Contextual Info: A E G CORP □02142^ QDCH571 4 17E D BUV 71 TIlI3J^FE£&sSI30 e le c tro n ic Crearve Technologies •p -*V J 3 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies Features: • Implantation High reverse voltage • Triple diffusion

IRLZ44

Abstract: 250M IRLZ30 IRLZ34 IRLZ40 004I1
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ44/40 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: DALLAS SEMICONDUCTOR PRELIMINARY DS21Q42 Enhanced QUAD T1 FRAMER FUNCTIONAL DIAGRAM FEATURES • FourTl DS1/ISDN-PRI/J1 framing transceivers • All four framers are fully independent • Each of the four framers contain dual twoframe elastic store slip buffers that can connect

Contextual Info: P-CHANNEL POWER MOSFETS SSD2108 FEATURES 8SOIC • L o w e r R ds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

MAE A1470

Contextual Info: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current

T 4148

Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
Contextual Info: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •

pal 007a

Abstract: OO3A MARKING PAL 002a pal 005a PAL 006A 20L8 PAL20L8 PAL20R4 PAL20R6 PAL20R8
Contextual Info: ADV MICRO PLA/ PLE/ ARRAYS E M ffiW B i COM’L SÛE D Bi G2S7S2b 008=1443 3 B A M D 2 MIL . T—4 6 —1 9 - 1 3 7 1 ^ PAL20R8 Family AdvaS 24-pin TTL Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay

Contextual Info: MITSUBISHI LSIS M 5 M 4 S 1 6 S 2 1 C T P -7 ,- 8 , - 1 0 16777216-BIT 2-BANK x 2Q97152-WORD BY 4-BIT SYNCHRONOUS DYNAMIC RAM some DESCRIPTION The M5M4S16S21CTP is a 2-bank x 2097152-word by 4-bit PIN CONFIGURATION (TOP VIEW) Synchronous DRAM, with SSTL* 1 interface. All inputs and out

Contextual Info: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT TC74AC1 39P/F/FN/FS DATA SILICON MONOLITHIC DUAL 2 - T O - 4 LINE DECODER The TC74AC139 is an advanced high speed CMOS 2 - to - 4 LINE DECODER fabricated with silicon gate and double layer metal wiring C2MOS technology.

LD011

Contextual Info: m i c r o e l e c t r o n i c s group Advance Data Sheet November 1997 Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.110 Interface andTime-Slot Interchanger 1. Product Overview • Programmable switching between local time-slots and H.100 bus, up to 256 connections

Contextual Info: ADV MI CRO PLA/PLE/ARRAYS 2öE D 1 Ë E ÎS I1 1 I COM’L: H-10/15/25, Q-15/25 P A L C E 1 6 V 8 02S7SEb o o s m u IAMDS 1 MIL: H-20/25 T -4 6 -T 9 -0 7 Advanced Micro Devices EE CMOS 20-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS •

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

transistor BU 102

Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300
Contextual Info: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W

Contextual Info: N AMER PHILIPS/DISCRETE b^E » • bbS3^31 DQ2T4fl2 fiTb * A P X BLW 89 U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

Contextual Info: ; Or Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN SHC5320 * FEATURES DESCRIPTION • • • • • • • The SHC5320 is a bipolar monolithic sample/hold circuit designed for use in precision high-speed data acquisition applications.