002F Search Results
002F Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TC78B002FNG |
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Brushless Motor Driver/1 Phase Driver/Vout(V)=18/Iout(A)=1.5/Square, Sine Wave | Datasheet | ||
| TC78B002FTG |
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Brushless Motor Driver/1 Phase Driver/Vout(V)=18/Iout(A)=1.5/Square, Sine Wave | Datasheet | ||
| RJE73188002F0 |
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Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield, With LEDs. | |||
| RJE73188002F1 |
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Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield, With LEDs. | |||
| BQ2002FSN |
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NiCd/NiMH charge controller with negative dV and peak voltage detection termination 8-SOIC 0 to 70 |
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002F Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
UF1002FL
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SUNMATE electronic Co., LTD | Ultra fast surface mount diodes in SOD-123FL package, rated for 1.0A average forward current and 100 to 800V repetitive peak reverse voltage, with low forward voltage and fast recovery time, suitable for high-frequency applications. | Original | ||||
US1002FL
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Jiangsu JieJie Microelectronics Co Ltd | Ultra fast recovery rectifier in SOD-123FL surface mount package, with repetitive peak reverse voltage from 50V to 1000V, average forward current 1.0A at 75°C, and reverse recovery time up to 75ns. | Original | ||||
ES1002FL
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Jiangsu JieJie Microelectronics Co Ltd | Surface mount super fast recovery rectifier in SOD-123FL package with 94V-0 flammability rating, glass passivated junction, lead-free finish, reverse voltage from 50V to 1000V, 1.0A average forward current, and 35ns reverse recovery time. | Original | ||||
GS1002FL
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SUNMATE electronic Co., LTD | Surface mount rectifier diode in SOD-123FL package, 1.0 A average forward current, 50 to 1000 V reverse voltage range, glass passivated chip, operating temperature from -50 to +150 °C. | Original | ||||
SM4002FL
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SUNMATE electronic Co., LTD | Surface mount rectifier diode in SOD-123FL package with 50 to 1000V peak repetitive reverse voltage, 1.0A average rectified output current, 30A non-repetitive surge current, low forward voltage drop of 1.10V at 1.0A, and operating temperature from -65 to +175°C.Surface mount rectifier diode in SOD-123FL package, 50 to 1000V peak repetitive reverse voltage, 1.0A average rectified current, 30A non-repetitive surge current, low forward voltage drop of 1.10V at 1.0A, operating temperature from -65 to +175°C.Surface mount rectifier diodes in SOD-123FL package with 50 to 1000V peak repetitive reverse voltage, 1.0A average rectified output current, 30A non-repetitive peak forward surge current, low forward voltage drop of 1.10V at 1.0A, and operating temperature from -65 to +175°C.Surface mount rectifier diode in SOD-123FL package with 50 to 1000V peak repetitive reverse voltage, 1.0A average rectified current, 30A non-repetitive surge current, low forward voltage drop of 1.10V at 1.0A, and operating temperature from -65 to +175°C. | Original | ||||
GS1002FL
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Jiangsu JieJie Microelectronics Co Ltd | Surface-mount general purpose rectifier in SOD-123FL package with 94V-0 flammability rating, glass passivated junction, lead-free compliant, available with repetitive peak reverse voltage from 50V to 1000V and maximum average forward current of 1.0A at 75°C.Surface mount general purpose rectifier in SOD-123FL package with 94V-0 flammability rating, glass passivated junction, lead-free compliant, available in voltage ratings from 50V to 1000V, rated for 1.0A average forward current.Surface mount general purpose rectifier in SOD-123FL package, rated for 50 to 1000 V repetitive peak reverse voltage, 1.0 A average forward current, with glass passivated junction and lead-free construction.Surface mount general purpose rectifier in SOD-123FL package, rated for repetitive peak reverse voltage from 50V to 1000V, with 1.0A average forward current and 30A surge current, featuring glass passivated junction and lead-free construction. | Original | ||||
RS1002FL
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SUNMATE electronic Co., LTD | Surface mount fast recovery rectifier diodes in SOD-123FL package, rated for 100 to 1000V, with 1.0A average forward current, low reverse leakage, and glass passivated junction for reliable performance in high temperature environments. | Original | ||||
ES1002FL
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SUNMATE electronic Co., LTD | Small surface mount ultra fast diodes in SOD-123FL package, 1.0 A average forward current, 100 to 600 V repetitive peak reverse voltage, low reverse leakage, glass passivated junction, suitable for surface mounted applications. | Original | ||||
RS1002FL
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Jiangsu JieJie Microelectronics Co Ltd | Surface mount fast recovery rectifier in SOD-123FL package with 94V-0 flammability rating, lead-free compliant, glass passivated junction, 1.0A average forward current, and reverse voltage ratings from 50V to 1000V. | Original | ||||
SSM3K7002F
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VBsemi Electronics Co Ltd | N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm typical RDS(on) at 10 V VGS, low threshold voltage of 2 V, 25 pF input capacitance, and 1200V ESD protection, suitable for logic-level interfacing and battery-operated systems. | Original | ||||
US1002FL
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SUNMATE electronic Co., LTD | Surface mount ultra fast diode in SOD-123FL package, rated for 1.0A average forward current and 100 to 800V repetitive peak reverse voltage, with low reverse leakage and glass passivated junction.Small surface mount ultra fast diodes in SOD-123FL package, rated for 1.0A average forward current and 100 to 800V repetitive peak reverse voltage, with low forward voltage and fast recovery time, suitable for high-frequency rectification applications.SOD-123FL molded small surface mount ultra fast diodes with 100 to 800V voltage range, 1.0A average forward current, low reverse leakage, and glass passivated junction for high reliability in surface mounted applications.Small surface mount ultra fast diodes in SOD-123FL molded package, rated for 1.0A average forward current and 100 to 800V repetitive peak reverse voltage, with low reverse leakage and fast recovery time.SOD-123FL surface mount ultra fast diode with 1.0A average forward current, 100 to 800V repetitive peak reverse voltage, low reverse leakage, and plastic over passivated junction construction for high temperature soldering applications. | Original |
002F Price and Stock
Delta Electronics Inc RL1632T4F-R002-FNHRES 0.002 OHM 1% 1W WIDE 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RL1632T4F-R002-FNH | Digi-Reel | 11,749 | 1 |
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Buy Now | |||||
Samtec Inc CLT-110-02-F-D-BE-K-TRCONN RCPT 20POS 0.079 GOLD SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CLT-110-02-F-D-BE-K-TR | Cut Tape | 2,549 | 1 |
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Buy Now | |||||
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CLT-110-02-F-D-BE-K-TR | Cut Tape | 87,162 | 1 |
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Buy Now | |||||
Vishay Intertechnologies MCA12060C1002FP500RES 10K OHM 1% 1/4W 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MCA12060C1002FP500 | Digi-Reel | 2,314 | 1 |
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Buy Now | |||||
KOA Speer Electronics Inc RK73H3ATTE2002FRES 20K OHM 1% 1W 2512 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RK73H3ATTE2002F | Cut Tape | 1,538 | 1 |
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Buy Now | |||||
TE Connectivity A9AAT-1002FFLEX CABLE - AFE10T/AF10/AFE10T |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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A9AAT-1002F | Bulk | 614 | 1 |
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Buy Now | |||||
002F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA ^0^7 240 002flE?75 37ñ TC51V4265DFTS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265D FTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar |
OCR Scan |
002flE TC51V4265DFTS60/70 TheTC51V4265D TheTC51V4265DFTS TC51V4265DFTS TC51V4265DFTS-60/70 DR04061194 | |
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Contextual Info: IC dependence of oscillating characteristics M30302MEP-002FP FCR8.0MC5 - S Room Temp. Udd [U] 5 item a~e M30302MEP-002FP - HH FCR8.0MC5 (Fig.a~e) Udd= 5 EU] Q 0 Tupical [U1_ a. U1H/U1L J I I I I b. U2H/U2L U2H iU2L |
OCR Scan |
M30302MEP-002FP | |
h 9645
Abstract: FCR16
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OCR Scan |
M30302MEP-002FP FCR16 M3B302MEP-002FP h 9645 | |
FCR16Contextual Info: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 XOUT 13 FCR16.0M2G 1 2 V1H/V1L V2H/V2L CL1 CL2 5pF 5pF Oscillating circuit for evaluation |
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M30302MEP-002FP FCR16 | |
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Contextual Info: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. |
OCR Scan |
002fi42b BUT12F BUT12AF | |
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Contextual Info: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran |
OCR Scan |
002flT33 BLV20 | |
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Contextual Info: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead |
OCR Scan |
b53R31 002fllRfl 2PC4081 2PC4081Q 2PC4081R 2PC4081S | |
592-2222-013F
Abstract: 592-3030-013F 592-2020-013F 592-2121-002F 592-2222-002F multicolor led 2 pin 592-2023-0 lrj 59
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OCR Scan |
592-2020-002F 592-2020-013F 592-2023-002F 592-2023-013F 592-2121-002F 592-2121-0I3F 592-2124-013F 592-2222-002F 592-2222-013F 592-2320-002F 592-2222-013F 592-3030-013F 592-2020-013F multicolor led 2 pin 592-2023-0 lrj 59 | |
591-2201-0I3F
Abstract: F-591
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OCR Scan |
591-2001-002F 591-2001-0I3F 591-2101-002F 591-2101-007F 591-2101-0I3F 591-2201-002F 591-2201-007F 591-2201-0I3F 591-2301-002F 591-2401-007F 591-2201-0I3F F-591 | |
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Contextual Info: NOTES: 1. MATERIALS AND FINISHES: BODY - BERYLLIUM COPPER, GOLD PLATING .000050 MIN THICK OVER SULFAMATE COUPLING NUT - STAINLESS STEEL, PASSIVATED 2. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC - 18 GHz C. VSWR(RETURN LOSS): 1.003 + .002f (GHz) MAX. |
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19-OCT-75 120mm 19-AUG-08 | |
B128Contextual Info: IC dependence of oscillating characteristics M30302MEP-002FP FCR6.0MC5 - S Room Temp. Udd [U] 5 item a~e M30302MEP-002FP - HH FCR6.0MC5 Udd= 5 EU] Q 0 Tupical [U1_ _ a. U1H/U1L J I I (Fig.a~e) I I b. U2H/U2L I I I I I I |
OCR Scan |
M30302MEP-002FP B128 | |
591-3501-002FContextual Info: Mouser Electronics Related Product Links 645-591-3501-002F - Dialight 591-3501-002F |
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645-591-3501-002F 591-3501-002F 591-3501-002F | |
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Contextual Info: PART N UMBER LED C O L O R = LED C O LO R Hl.EFF. / RED - GR E E N REV - YELLOW LED C OL O R O P E R A T I N G C H A R A C T E R I S T I C S AT 25 C A M B I E N T 591 - 2 0 0 1 - 002F MIN CHARACTERISTICS 591 - 2 0 0 1 - 007F HI.EFF. RED 591 - 2 0 0 1 - 0I3F |
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-002F -007F | |
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Contextual Info: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile |
OCR Scan |
bbS3R31 002flflb2 BLU60/28 BLU60/28 OT119) bbS3T31 nt44i MCA440 MCA439 | |
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Contextual Info: DIALIGHT PART NUMBER POSITION 1 POSITION 2 592 - 2 02 0 -002F 5 9 2- 20 20 - 0 13F RED RED [HI.EFF] [HI.EFF] 2 592 - 2 02 3 -002F 5 9 2- 20 23 - 0 13F IHI.EFF] GREEN 2 RED 5 9 2 - 2 1 2 1 -002F RED RED 5 9 2- 21 21 - 0 13F 5 9 2 - 21 24-002F 5 92 - 2 1 24 - 01 3F |
OCR Scan |
-002F 24-002F 592-2222-002F 592-2320-002F 592-2323-002F 592-2324-002F 592-2326-002F | |
5912004002FContextual Info: PART NUMBE R LED COLOR OPERATING CHARACTERISTICS AT 25°C COLOR MI N TYP MA X RED 6.0 1 1 .0 16.0 5 9 1 - 2 0 0 4 - 0 1 3F GREEN 3.0 5.0 8.0 591-2304-002F YELLOW 8.0 14.0 20.0 ORANGE 9.0 16.0 24.0 CHARACTERISTICS 591-2004-002F 591-2004-007F RED AMBIENT TEST |
OCR Scan |
591-2004-002F 591-2004-007F 591-2304-002F 591-2304-007F 591-2404-002F 591-2404-007F 591-2504-002F 591-2504-007F 5912004002F | |
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Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic |
OCR Scan |
bbS3R31 002fl37b BU2520D bbS3T31 | |
transistor 2n3053Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA |
OCR Scan |
002fll3b 2N30b3 transistor 2n3053 | |
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Contextual Info: IC dependence of oscillating characteristics M30302MEP-002FP FCR10.0MC5 - S Room Temp. Udd [U] 5 item a~e M30302MEP-002FP - HH FCRI0.0MC5 Udd= 5 EU] (Fig.a~e) Q a. U1H/U1L B Typical [U1 I I I I I I I I I I I I I I I I I I l_ b. U2H/U2L CUI_ |
OCR Scan |
M30302MEP-002FP FCR10 | |
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Contextual Info: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 1 XOUT 13 FCR6.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation |
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M30302MEP-002FP 30/30pF | |
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Contextual Info: REV ECN NO DRN CKD APR DATE 00 N.O MS 3 -28-07 REVISIONS NEW RELEASE 593-XXXXXX-002F PACKAGING SPECIFICATION 593-XXXXXX-013F .0591 -.0039 [1 .5+10 ] 157 O O O O O O O Q-J [1.75] S.2G5 it.on [56.0 +/- 0.3] 2.063 [52.40] O Cj— r~ . Direction 7 of feed .767 [20.0] |
OCR Scan |
593-XXXXXX-002F 3fC/60Z | |
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Contextual Info: APC-7 Coaxial Connectors Specifications ELECTRICAL ENVIRONMENTAL Test Requirement Impedance 50 ohms Frequency range 0-18 GHz VSWR Connectors on airline 1.003 + .002f GHz Insertion loss (in dB) Mating Sexless, coplanar by means of threaded ring housed |
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7x10-3 RG214/U | |
002fContextual Info: REV. PA RT NUMBER POSITION I POSITION 2 592 - 2020 - 002F RED RED 592 - 2020 - 0 I3F 592 - 2 0 2 3 - 002F 5 9 2 - 2 0 2 3 - 0 I3F 592 - 2 I 2 I - 002F 592 - 2 I 2 I -0 I3F 592-2 I24-002F 5 9 2 - 2 I 2 4 - 0 I3F 592 - 2222 - 002F [HI.EFF] [H I.EFF] 2 [HI.EFF] |
OCR Scan |
I24-002F 592-2326-002F 592-2424-002F 592-2626-002F 002f | |
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Contextual Info: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 1 XOUT 13 FCR10.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation |
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M30302MEP-002FP FCR10 20/20pF | |