B128 Search Results
B128 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Test Leads - Banana, Meter Interface, Test and Measurement, CORD PATCH BANANA PLUG 12" GRAY | Original | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128024006 | Carlo Gavazzi | Delay on Release (0.15 s - 6 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128024060 | Carlo Gavazzi | Delay on Release (1.5 s - 60 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B12809700R | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan | 62.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B12812 | Botron Company | B12812 CLEAR SILVER SHIELD-IT ME | Original | 192.71KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128120006 | Carlo Gavazzi | Delay on Release (0.15 s - 6 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128120060 | Carlo Gavazzi | Delay on Release (1.5 s - 60 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128220006 | Carlo Gavazzi | Delay on Release (0.15 s - 6 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128220060 | Carlo Gavazzi | Delay on Release (1.5 s - 60 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128724006 | Carlo Gavazzi | Delay on Release (0.15 s - 6 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B128724060 | Carlo Gavazzi | Delay on Release (1.5 s - 60 s) | Original | 62.58KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SB1280
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SUNMATE electronic Co., LTD | Schottky barrier rectifier diode with 2.1 grams weight, 30 to 100V reverse voltage range, 12A average forward current at 95°C, low forward voltage, and high surge current capability in an axial leaded R-6 package.Schottky barrier rectifier diode with 2.1 grams weight, 30 to 100V DC blocking voltage, 12A average forward rectified current at 95°C case temperature, and low forward voltage drop for high efficiency and surge current handling.Schottky barrier rectifier diode with 30 to 100V peak reverse voltage, 12A average forward current, low forward voltage, high surge capacity, and operating temperature from -55 to +200°C.Schottky barrier rectifier diode with 2.1 grams weight, 30-100V voltage range, 12A average forward current at 95°C, low forward voltage, and high surge current capability in R-6 molded plastic case.Schottky barrier rectifier diode with 2.1g weight, 30-100V voltage range, 12A average forward current, low forward voltage, high surge capacity, and operating temperature from -55 to +200°C.Schottky barrier rectifier diode with 2.1 grams weight, 30 to 100V reverse voltage range, 12A average forward current, low forward voltage drop, and surge current handling up to 275A.Schottky barrier rectifier diode with 2.1 grams weight, 30 to 100V DC blocking voltage, 12A average forward current at 95°C, low forward voltage, and high surge current capability in an axial leaded R-6 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GD25LB128D
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GigaDevice Semiconductor (Beijing) Inc | 128M-bit, standard SPI, Dual/Quad SPI, QPI mode, Dual I/O 240Mbits/s, Quad I/O & Quad output 480Mbits/s. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GD25B128H
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GigaDevice Semiconductor (Beijing) Inc | 128M-bit Serial NOR Flash, supports SPI, Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s, DTR Quad I/O 640Mbits/s. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25LB128E
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GigaDevice Semiconductor (Beijing) Inc | Serial flash, 128M-bit, SPI, Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s, 8-LEAD WSON/USON, 8-LEAD SOP, 24-BALL TFBGA (5x5), 16-LEAD SOP. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GD25B128E
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GigaDevice Semiconductor (Beijing) Inc | 128M-bit, Serial NOR Flash, SPI, Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
B128 Price and Stock
Microchip Technology Inc AT90USB1286-MURIC MCU 8BIT 128KB FLASH 64QFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AT90USB1286-MUR | Cut Tape | 22,896 | 1 |
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Buy Now | |||||
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AT90USB1286-MUR | Reel | 7 Weeks | 4,000 |
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AT90USB1286-MUR | Reel | 7 Weeks |
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AT90USB1286-MUR | 9 Weeks | 4,000 |
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AT90USB1286-MUR | 8 Weeks | 4,000 |
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AT90USB1286-MUR |
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Buy Now | ||||||||
MACOM MA4E1340B1-287TDIODE SCHOTTKY 70V 250MW SOT-23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MA4E1340B1-287T | Digi-Reel | 6,399 | 1 |
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Buy Now | |||||
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MA4E1340B1-287T | 2,850 |
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Get Quote | |||||||
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MA4E1340B1-287T | 3,000 |
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Buy Now | |||||||
Microchip Technology Inc AT90USB1286-AURIC MCU 8BIT 128KB FLASH 64TQFP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AT90USB1286-AUR | Cut Tape | 2,084 | 1 |
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Buy Now | |||||
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AT90USB1286-AUR | Cut Tape | 622 | 1 |
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Buy Now | |||||
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AT90USB1286-AUR | Reel | 1,000 | 7 Weeks |
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Buy Now | |||||
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AT90USB1286-AUR | 9 Weeks | 1,000 |
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Buy Now | ||||||
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AT90USB1286-AUR | 2,890 |
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Get Quote | |||||||
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AT90USB1286-AUR | 2,000 |
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Buy Now | |||||||
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AT90USB1286-AUR | 1,390 |
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Buy Now | |||||||
GigaDevice Semiconductor (Beijing) Inc GD25LB128ESIGRIC FLASH 128MBIT SPI/QUAD 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GD25LB128ESIGR | Reel | 2,000 | 2,000 |
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Buy Now | |||||
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GD25LB128ESIGR | 1 |
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Buy Now | |||||||
Vishay Dale G00320R00FB1280G-3-80 20 1% B12 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G00320R00FB1280 | Bulk | 400 | 1 |
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Buy Now | |||||
B128 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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B128
Abstract: B256 U810BS U811BS U812BS TEMIC ecl
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U810BS U811BS U812BS U811BS: U812BS: U810BS: 05-Sep-96 D-74025 B128 B256 U812BS TEMIC ecl | |
transistor B1202
Abstract: "Rocker Switch" B1151 b1202 Transistor B1203 ROCKER SWITCH B1292 "Rocker Switch" SPST B127A 10A "Rocker Switch"
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B1150 B128B B1151 B1291 B1202 B12912 B1203 B1292 B120C B1293 transistor B1202 "Rocker Switch" B1151 b1202 Transistor B1203 ROCKER SWITCH B1292 "Rocker Switch" SPST B127A 10A "Rocker Switch" | |
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Contextual Info: Mobile data carrier TW-R20-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R20-B128-Ex 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-L80-50-P-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-L80-50-P-B128 ope47/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-R30-M-B128 • ■ 3 different mounting options in/on metal, incl. accessories EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R30-M-B128 D-45472 MF-R30 TWR30-M-B128 2013-07-12T17 | |
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Contextual Info: Mobile high-temperature data carrier TW-Q51-HT-B128 • ■ The high-temperature data carriers must undergo adequate stress tests within the proposed temperature range before deployment. Otherwise, their durability cannot be guaranteed when exposed to temperatures outside the |
Original |
TW-Q51-HT-B128 TH-Q51T-HT 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-BS10X1.5-19-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-BS10X1 5-19-B128 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-L49-46-F-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-L49-46-F-B128 ope47/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
Telefunken u 690
Abstract: B128 B256 B128D
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D-74025 Telefunken u 690 B128 B256 B128D | |
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Contextual Info: Mobile data carrier TW-R16-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
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TW-R16-B128-Ex 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-R50-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R50-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-L86-54-C-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-L86-54-C-B128 ope47/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
BVS 09 ATEXContextual Info: Mobile data carrier TW-R30-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R30-B128-Ex 2013-07-12T17 D-45472 BVS 09 ATEX | |
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Contextual Info: •Ferrules ●2-Groove Type Dimension A Applicable Optical Fiber Fiber Entrance Angle HRS No. Product Number CL704-0103-6 HSC-F321-B124 0.124 CL704-0104-9 HSC-F321-B125 0.125 CL704-0105-1 HSC-F321-B126 0.126 CL704-0106-4 HSC-F321-B127 0.127 CL704-0107-7 HSC-F321-B128 |
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CL704-0103-6 HSC-F321-B124 CL704-0104-9 HSC-F321-B125 CL704-0105-1 HSC-F321-B126 CL704-0106-4 HSC-F321-B127 CL704-0107-7 HSC-F321-B128 | |
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Contextual Info: PACKAGE INFORMATION Micrel 128 LEAD HQFP DIE UP (B128-1) Rev. 01 Rev.: B 1 Amendment: 0 Issue Date: July, 1999 |
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B128-1) | |
TN-M18-H1147/S1126Contextual Info: Mobile data carrier TW-R16-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
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TW-R16-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 TN-M18-H1147/S1126 | |
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Contextual Info: Mobile data carrier TW-R30-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R30-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-R20-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R20-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
0/CL709-0010-Contextual Info: •Ferrules SuitaWe Optical Fiber »r:' ■ CL709-0009-I 3 M F-F3-B124 0.124 J0001 CL709-0010- 3 M F-F3-B125 0.125 ;0001 CL709-0011 - I M F-F3-B126 0.126 S0001 CL709-0012- 1 M F-F3-B127 0.127 S0001 CL709-0013- r M F-F3-B128 0.128 S0001 CL709-0014- 3 M F-F3-E253 |
OCR Scan |
CL709-0009-I F-F3-B124 CL709-0010- F-F3-B125 CL709-0011 F-F3-B126 CL709-0012- F-F3-B127 CL709-0013- F-F3-B128 0/CL709-0010- | |
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Contextual Info: Mobile data carrier TW-BV10X1.5-19-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-BV10X1 5-19-B128 2013-07-12T17 D-45472 | |
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Contextual Info: Mobile data carrier TW-BD10X1.5-19-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
TW-BD10X1 5-19-B128 2013-07-12T17 D-45472 | |
B1280B500C1000-700Contextual Info: B1280B500C1000-700 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) |
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B1280B500C1000-700 | |
RL6655Contextual Info: 8 7 A D 6 5 4 3 2 1 178.00 mm [7.008 in] D 70.00 mm [2.756 in] 2.83 mm [0.111 in] 135.0° B B128.00 mm 135.00 mm [5.315 in] 150.00 mm [5.906 in] [5.039 in] 0.30 mm [0.012 in] RECESS A C 165.00 mm [6.496 in] 0.30 mm [0.012 in] RECESS SECTION A-A ASSEMBLY - TOP |
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RL6655 UL94-HB) RL6655 | |
D032
Abstract: B064
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Original |
HB28E016/D032/B064/B128MM2 Min/20 D032 B064 | |