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BLW79 Abstract: IEC134 Contextual Info: N AMER PHILIPS/DISCRETE bTE bfc.53^31 002cmDfl TS1 » A . t5 L W /y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applicationsin class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V . The resistance stabilization of the	OCR Scan	002cm blw79 iec134	PDF

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BLW79

Abstract: IEC134
Contextual Info: N AMER PHILIPS/DISCRETE bTE bfc.53^31 002cmDfl TS1 » A . t5 L W /y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applicationsin class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V . The resistance stabilization of the

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002cm blw79 iec134

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