002CM Search Results

BLW79

Abstract: IEC134
Contextual Info: N AMER PHILIPS/DISCRETE bTE bfc.53^31 002cmDfl TS1 » A . t5 L W /y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applicationsin class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V . The resistance stabilization of the

T3D 54 DIODE

Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Contextual Info: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: O K I Semiconductor MSM532030B 131,072-Word x 16-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM532030B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532030B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times

Contextual Info: 8 7 V1.1 I NOTE: THIS DEVICE IS ROHS COMPLIANT. REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE A A A A "CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! o to o CM CD •M" •Si ro I APPROVED 268 ro MATERIAL: CONTACT: BRASS, GOLD PLATED

MSM532020B

Abstract: MSM532030B
Contextual Info: O K I Semiconductor MSM532030B_ 131,072-Word x 16-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM532030B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity The MSM532030B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times

1F0004

Abstract: ID341G01 IFD002 IFD003
Contextual Info: SHARP ID341G0 1 Contents 1. General D escriptions. p. 3 2. . p. 3 3. Block D iagram . p 4 4. Pin Connections.